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Passivation ability of graphene oxide demonstrated by two-different-metal solar cells.

Hsu WT, Tsai ZS, Chen LC, Chen GY, Lin CC, Chen MH, Song JM, Lin CH - Nanoscale Res Lett (2014)

Bottom Line: The study on graphene oxide (GO) grows rapidly in recent years.Graphene oxide has been applied on Si two-different-metal solar cells.The simple chemical process to deposit graphene oxide makes low thermal budget, large-area deposition, and fast production of surface passivation possible.

View Article: PubMed Central - PubMed

Affiliation: Department of Opto-Electronic Engineering, National Dong Hwa University, Hualien, Taiwan, sugey0123@gmail.com.

ABSTRACT
The study on graphene oxide (GO) grows rapidly in recent years. We find that graphene oxide could act as the passivation material in photovoltaic applications. Graphene oxide has been applied on Si two-different-metal solar cells. The suitable introduction of graphene oxide could result in obvious enhancement on the efficiency. The simple chemical process to deposit graphene oxide makes low thermal budget, large-area deposition, and fast production of surface passivation possible. The different procedures to incorporate graphene oxide in Si two-different-metal solar cells are compared, and 21% enhancement on the efficiency is possible with a suitable deposition method.

No MeSH data available.


The AFM images of (a) SiGb1, (b) SiGb2, and (c) GbSi samples. For the sample of SiGb1, the deposited GO film was approximately 20 nm in thickness. On the other hand, the GO film on GbSi is much thicker due to the extra SC1 treatment before GO deposition.
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Fig4: The AFM images of (a) SiGb1, (b) SiGb2, and (c) GbSi samples. For the sample of SiGb1, the deposited GO film was approximately 20 nm in thickness. On the other hand, the GO film on GbSi is much thicker due to the extra SC1 treatment before GO deposition.

Mentions: The other GO sample, GbSi, shows a worse performance than the ConSi. In order to find the reason for degradation of GbSi, the atomic force microscope (AFM) images of samples with GO deposition were measured (Figure 4). The AFM images show that the SC1 treatment resulted in a much thick GO film on the rear side of Si of GbSi (Figure 4c) as compared with those of SiGb1 (Figure 4a) and SiGb2 (Figure 4b). The highly hydrophilic surface of GbSi may also attract GO flakes on the top side (sides with electrodes). The GO flakes between Si and electrodes would prevent the current conduction, which results in the poor performance of GbSi as compared to the ConSi.Figure 4


Passivation ability of graphene oxide demonstrated by two-different-metal solar cells.

Hsu WT, Tsai ZS, Chen LC, Chen GY, Lin CC, Chen MH, Song JM, Lin CH - Nanoscale Res Lett (2014)

The AFM images of (a) SiGb1, (b) SiGb2, and (c) GbSi samples. For the sample of SiGb1, the deposited GO film was approximately 20 nm in thickness. On the other hand, the GO film on GbSi is much thicker due to the extra SC1 treatment before GO deposition.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4493844&req=5

Fig4: The AFM images of (a) SiGb1, (b) SiGb2, and (c) GbSi samples. For the sample of SiGb1, the deposited GO film was approximately 20 nm in thickness. On the other hand, the GO film on GbSi is much thicker due to the extra SC1 treatment before GO deposition.
Mentions: The other GO sample, GbSi, shows a worse performance than the ConSi. In order to find the reason for degradation of GbSi, the atomic force microscope (AFM) images of samples with GO deposition were measured (Figure 4). The AFM images show that the SC1 treatment resulted in a much thick GO film on the rear side of Si of GbSi (Figure 4c) as compared with those of SiGb1 (Figure 4a) and SiGb2 (Figure 4b). The highly hydrophilic surface of GbSi may also attract GO flakes on the top side (sides with electrodes). The GO flakes between Si and electrodes would prevent the current conduction, which results in the poor performance of GbSi as compared to the ConSi.Figure 4

Bottom Line: The study on graphene oxide (GO) grows rapidly in recent years.Graphene oxide has been applied on Si two-different-metal solar cells.The simple chemical process to deposit graphene oxide makes low thermal budget, large-area deposition, and fast production of surface passivation possible.

View Article: PubMed Central - PubMed

Affiliation: Department of Opto-Electronic Engineering, National Dong Hwa University, Hualien, Taiwan, sugey0123@gmail.com.

ABSTRACT
The study on graphene oxide (GO) grows rapidly in recent years. We find that graphene oxide could act as the passivation material in photovoltaic applications. Graphene oxide has been applied on Si two-different-metal solar cells. The suitable introduction of graphene oxide could result in obvious enhancement on the efficiency. The simple chemical process to deposit graphene oxide makes low thermal budget, large-area deposition, and fast production of surface passivation possible. The different procedures to incorporate graphene oxide in Si two-different-metal solar cells are compared, and 21% enhancement on the efficiency is possible with a suitable deposition method.

No MeSH data available.