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Passivation ability of graphene oxide demonstrated by two-different-metal solar cells.

Hsu WT, Tsai ZS, Chen LC, Chen GY, Lin CC, Chen MH, Song JM, Lin CH - Nanoscale Res Lett (2014)

Bottom Line: The study on graphene oxide (GO) grows rapidly in recent years.Graphene oxide has been applied on Si two-different-metal solar cells.The simple chemical process to deposit graphene oxide makes low thermal budget, large-area deposition, and fast production of surface passivation possible.

View Article: PubMed Central - PubMed

Affiliation: Department of Opto-Electronic Engineering, National Dong Hwa University, Hualien, Taiwan, sugey0123@gmail.com.

ABSTRACT
The study on graphene oxide (GO) grows rapidly in recent years. We find that graphene oxide could act as the passivation material in photovoltaic applications. Graphene oxide has been applied on Si two-different-metal solar cells. The suitable introduction of graphene oxide could result in obvious enhancement on the efficiency. The simple chemical process to deposit graphene oxide makes low thermal budget, large-area deposition, and fast production of surface passivation possible. The different procedures to incorporate graphene oxide in Si two-different-metal solar cells are compared, and 21% enhancement on the efficiency is possible with a suitable deposition method.

No MeSH data available.


The dark current density versus voltage characteristics of SiGb1 and ConSi. The smaller dark reverse (negative bias) current density of the SiGb1 cell contributes to its higher VOC as compared to ConSi.
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Fig3: The dark current density versus voltage characteristics of SiGb1 and ConSi. The smaller dark reverse (negative bias) current density of the SiGb1 cell contributes to its higher VOC as compared to ConSi.

Mentions: The current versus voltage (IV) characteristics of the samples with AM 1.5 G illumination from the top side (the side with electrodes) are shown in Figure 2. When light is irradiated from the top surface, the short-circuit current (ISC) of the SiGb1, SiGb2, ConSi, and GbSi cells are 1.930, 1.703, 1.603, and 1.563 mA, respectively. The open-circuit voltage (VOC) are 0.423, 0.409, 0.408, and 0.376 V, respectively. Both SiGb1 and SiGb2 show better performance as compared with the reference ConSi cell. It proves that GO indeed owns the ability to passivate the Si solar cells. It should be mentioned that in the current stage, the solar cell is not optimized on the efficiency, and hence, the efficiency is not good enough. Hence, we only focus on ISC and VOC in order to indicate the influence contributed by GO. Because the Au and Al should be evaporated by shadow masks in different runs, the alignment between runs limits the pattern. The pattern could not be optimized just considering carrier generation and collection. The device area is 0.72 cm2, but the effective area without electrode shielding is only 0.19 cm2. Hence, the best GO (SiGb1) and control cells (ConSi) can only own efficiencies of 0.63% and 0.52%, respectively. Although the absolute value of efficiency is low due to the un-optimized cell structure, the results indicate that the GO introduction can contribute up to 21% enhancement on the efficiency. The dark current density versus voltage characteristics of SiGb1 and ConSi are also shown in Figure 3. The smaller dark reverse (negative bias) current density of the SiGb1 cell contributes to its higher VOC as compared to ConSi[17].Figure 2


Passivation ability of graphene oxide demonstrated by two-different-metal solar cells.

Hsu WT, Tsai ZS, Chen LC, Chen GY, Lin CC, Chen MH, Song JM, Lin CH - Nanoscale Res Lett (2014)

The dark current density versus voltage characteristics of SiGb1 and ConSi. The smaller dark reverse (negative bias) current density of the SiGb1 cell contributes to its higher VOC as compared to ConSi.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4493844&req=5

Fig3: The dark current density versus voltage characteristics of SiGb1 and ConSi. The smaller dark reverse (negative bias) current density of the SiGb1 cell contributes to its higher VOC as compared to ConSi.
Mentions: The current versus voltage (IV) characteristics of the samples with AM 1.5 G illumination from the top side (the side with electrodes) are shown in Figure 2. When light is irradiated from the top surface, the short-circuit current (ISC) of the SiGb1, SiGb2, ConSi, and GbSi cells are 1.930, 1.703, 1.603, and 1.563 mA, respectively. The open-circuit voltage (VOC) are 0.423, 0.409, 0.408, and 0.376 V, respectively. Both SiGb1 and SiGb2 show better performance as compared with the reference ConSi cell. It proves that GO indeed owns the ability to passivate the Si solar cells. It should be mentioned that in the current stage, the solar cell is not optimized on the efficiency, and hence, the efficiency is not good enough. Hence, we only focus on ISC and VOC in order to indicate the influence contributed by GO. Because the Au and Al should be evaporated by shadow masks in different runs, the alignment between runs limits the pattern. The pattern could not be optimized just considering carrier generation and collection. The device area is 0.72 cm2, but the effective area without electrode shielding is only 0.19 cm2. Hence, the best GO (SiGb1) and control cells (ConSi) can only own efficiencies of 0.63% and 0.52%, respectively. Although the absolute value of efficiency is low due to the un-optimized cell structure, the results indicate that the GO introduction can contribute up to 21% enhancement on the efficiency. The dark current density versus voltage characteristics of SiGb1 and ConSi are also shown in Figure 3. The smaller dark reverse (negative bias) current density of the SiGb1 cell contributes to its higher VOC as compared to ConSi[17].Figure 2

Bottom Line: The study on graphene oxide (GO) grows rapidly in recent years.Graphene oxide has been applied on Si two-different-metal solar cells.The simple chemical process to deposit graphene oxide makes low thermal budget, large-area deposition, and fast production of surface passivation possible.

View Article: PubMed Central - PubMed

Affiliation: Department of Opto-Electronic Engineering, National Dong Hwa University, Hualien, Taiwan, sugey0123@gmail.com.

ABSTRACT
The study on graphene oxide (GO) grows rapidly in recent years. We find that graphene oxide could act as the passivation material in photovoltaic applications. Graphene oxide has been applied on Si two-different-metal solar cells. The suitable introduction of graphene oxide could result in obvious enhancement on the efficiency. The simple chemical process to deposit graphene oxide makes low thermal budget, large-area deposition, and fast production of surface passivation possible. The different procedures to incorporate graphene oxide in Si two-different-metal solar cells are compared, and 21% enhancement on the efficiency is possible with a suitable deposition method.

No MeSH data available.