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Magnetic In x Ga 1 - x N nanowires at room temperature using Cu dopant and annealing.

Park YH, Ha R, Park TE, Kim SW, Seo D, Choi HJ - Nanoscale Res Lett (2015)

Bottom Line: The typical diameter of the Cu:In x Ga1 - x N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers.The as-grown nanowires exhibited diamagnetism.After annealing, the nanowires exhibited ferromagnetism with saturation magnetic moments higher than 0.8 μB (1 μB × 10(-24) Am(2)) per Cu atom at room temperature by the measurements using a superconducting quantum interference device (SQUID) magnetometer.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea, younhopark@yonsei.ac.kr.

ABSTRACT
Single-crystal, Cu-doped In x Ga1 - x N nanowires were grown on GaN/Al2O3 substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:In x Ga1 - x N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanowires exhibited diamagnetism. After annealing, the nanowires exhibited ferromagnetism with saturation magnetic moments higher than 0.8 μB (1 μB × 10(-24) Am(2)) per Cu atom at room temperature by the measurements using a superconducting quantum interference device (SQUID) magnetometer. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L 2,3-edges indicated that the doped Cu had a local magnetic moment and that its electronic configuration was mainly 3d (9). It possessed a small trivalent component, and thus, the n-type behavior of electrical property is measured at room temperature.

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SEM, EDS, and HRTEM images and SAED pattern of nanowires. (a) Typical SEM image of Cu-doped InxGa1 - xN nanowires. (b) EDS image of the nanowire. (c) HRTEM image and the SAED pattern (inset) of an 80-nm-diameter nanowire.
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Fig1: SEM, EDS, and HRTEM images and SAED pattern of nanowires. (a) Typical SEM image of Cu-doped InxGa1 - xN nanowires. (b) EDS image of the nanowire. (c) HRTEM image and the SAED pattern (inset) of an 80-nm-diameter nanowire.

Mentions: Figure 1a shows a scanning electron microscopy (SEM) image of the Cu-doped InxGa1 - xN nanowires grown on the substrate with Au/Ni as bi-catalyst[12]. The nanowires have diameters in the range of 80 to 150 nm and lengths in the range of hundreds of micrometers. The nanowires were sonicated in ethanol and dropped to molybdenum grids for the EDS and TEM analyses. EDS was used to determine the composition of Cu in the Cu-doped InxGa1 - xN nanowires. Figure 1b shows the respective Cu concentrations at the center of the Cu-doped InxGa1 - xN nanowire. The average Cu concentration was about 1.8%. Figure 1c shows a high-resolution TEM image, which illustrates that the nanowires are single crystals without defects and secondary phases. In the inset of Figure 1c, the selected area electron diffraction (SAED) pattern shows the nanowires grown along the [001] direction. We also characterized the annealed nanowires and found any structural and compositional changes in the nanowires.Figure 1


Magnetic In x Ga 1 - x N nanowires at room temperature using Cu dopant and annealing.

Park YH, Ha R, Park TE, Kim SW, Seo D, Choi HJ - Nanoscale Res Lett (2015)

SEM, EDS, and HRTEM images and SAED pattern of nanowires. (a) Typical SEM image of Cu-doped InxGa1 - xN nanowires. (b) EDS image of the nanowire. (c) HRTEM image and the SAED pattern (inset) of an 80-nm-diameter nanowire.
© Copyright Policy - open-access
Related In: Results  -  Collection

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getmorefigures.php?uid=PMC4493842&req=5

Fig1: SEM, EDS, and HRTEM images and SAED pattern of nanowires. (a) Typical SEM image of Cu-doped InxGa1 - xN nanowires. (b) EDS image of the nanowire. (c) HRTEM image and the SAED pattern (inset) of an 80-nm-diameter nanowire.
Mentions: Figure 1a shows a scanning electron microscopy (SEM) image of the Cu-doped InxGa1 - xN nanowires grown on the substrate with Au/Ni as bi-catalyst[12]. The nanowires have diameters in the range of 80 to 150 nm and lengths in the range of hundreds of micrometers. The nanowires were sonicated in ethanol and dropped to molybdenum grids for the EDS and TEM analyses. EDS was used to determine the composition of Cu in the Cu-doped InxGa1 - xN nanowires. Figure 1b shows the respective Cu concentrations at the center of the Cu-doped InxGa1 - xN nanowire. The average Cu concentration was about 1.8%. Figure 1c shows a high-resolution TEM image, which illustrates that the nanowires are single crystals without defects and secondary phases. In the inset of Figure 1c, the selected area electron diffraction (SAED) pattern shows the nanowires grown along the [001] direction. We also characterized the annealed nanowires and found any structural and compositional changes in the nanowires.Figure 1

Bottom Line: The typical diameter of the Cu:In x Ga1 - x N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers.The as-grown nanowires exhibited diamagnetism.After annealing, the nanowires exhibited ferromagnetism with saturation magnetic moments higher than 0.8 μB (1 μB × 10(-24) Am(2)) per Cu atom at room temperature by the measurements using a superconducting quantum interference device (SQUID) magnetometer.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea, younhopark@yonsei.ac.kr.

ABSTRACT
Single-crystal, Cu-doped In x Ga1 - x N nanowires were grown on GaN/Al2O3 substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:In x Ga1 - x N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanowires exhibited diamagnetism. After annealing, the nanowires exhibited ferromagnetism with saturation magnetic moments higher than 0.8 μB (1 μB × 10(-24) Am(2)) per Cu atom at room temperature by the measurements using a superconducting quantum interference device (SQUID) magnetometer. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L 2,3-edges indicated that the doped Cu had a local magnetic moment and that its electronic configuration was mainly 3d (9). It possessed a small trivalent component, and thus, the n-type behavior of electrical property is measured at room temperature.

No MeSH data available.


Related in: MedlinePlus