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Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

Zhang M, Long S, Wang G, Liu R, Xu X, Li Y, Xu D, Liu Q, Lv H, Miranda E, Suñé J, Liu M - Nanoscale Res Lett (2014)

Bottom Line: The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data.The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it.Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.

View Article: PubMed Central - PubMed

Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China, zhangmeiyun@ime.ac.cn.

ABSTRACT
A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switching property. The experimental observations show that the distributions of the reset voltage (V reset) and reset current (I reset) are greatly influenced by the initial on-state resistance (R on) which is closely related to the size of the conductive filament (CF) before the reset process. The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data. Using resistance screening method, the statistical data of the reset voltage and current are decomposed into several ranges and the distributions of them in each range are analyzed by the Weibull model. Both the Weibull slopes of the reset voltage and current are demonstrated to be independent of the on-state resistance which indicates that no CF dissolution occurs before the reset point. The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it. These behaviors are fully in consistency with the thermal dissolution model, which gives an insight on the physical mechanism of the reset switching. Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.

No MeSH data available.


Related in: MedlinePlus

Experimental (symbols) and theoretical reset temperature (lines) of two reset cycles in the Cu/HfO2/Pt device. The dashed lines indicate the reset voltage dropped on the RRAM cell, corresponding to the maximum current, i.e., the reset point. The experimental and theoretical curves nearly coincide before the reset point, so the reset point represents the starting point of the CF dissolution.
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Fig5: Experimental (symbols) and theoretical reset temperature (lines) of two reset cycles in the Cu/HfO2/Pt device. The dashed lines indicate the reset voltage dropped on the RRAM cell, corresponding to the maximum current, i.e., the reset point. The experimental and theoretical curves nearly coincide before the reset point, so the reset point represents the starting point of the CF dissolution.

Mentions: In our previous work [21], an analytical model based on the thermal dissolution model has been proposed for the unipolar reset statistics. Implementing this model into the experimental statistics of our Cu/HfO2/Pt RRAM device, the abstracted Weibull slopes of Vreset and Ireset distributions, which are both independent on Ron, indicate that the reset point corresponds to the initial step of the CF dissolution in this device and there is no structural degradation before the reset point. This result can be evidenced by comparing the experimental and theoretical maximum CF temperature curves detailedly described in [22]. Figure 5 shows the experimental and theoretical reset temperature curves for two cycles of our Cu/HfO2/Pt device. In Figure 5, before the reset point, the two types of curves are exactly in coincidence, which indicates that the reset point just corresponds to the starting point of the CF dissolution. In consequence, the statistical results of Cu/HfO2/Pt RRAM device are compatible with the thermal dissolution model.Figure 5


Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

Zhang M, Long S, Wang G, Liu R, Xu X, Li Y, Xu D, Liu Q, Lv H, Miranda E, Suñé J, Liu M - Nanoscale Res Lett (2014)

Experimental (symbols) and theoretical reset temperature (lines) of two reset cycles in the Cu/HfO2/Pt device. The dashed lines indicate the reset voltage dropped on the RRAM cell, corresponding to the maximum current, i.e., the reset point. The experimental and theoretical curves nearly coincide before the reset point, so the reset point represents the starting point of the CF dissolution.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4493841&req=5

Fig5: Experimental (symbols) and theoretical reset temperature (lines) of two reset cycles in the Cu/HfO2/Pt device. The dashed lines indicate the reset voltage dropped on the RRAM cell, corresponding to the maximum current, i.e., the reset point. The experimental and theoretical curves nearly coincide before the reset point, so the reset point represents the starting point of the CF dissolution.
Mentions: In our previous work [21], an analytical model based on the thermal dissolution model has been proposed for the unipolar reset statistics. Implementing this model into the experimental statistics of our Cu/HfO2/Pt RRAM device, the abstracted Weibull slopes of Vreset and Ireset distributions, which are both independent on Ron, indicate that the reset point corresponds to the initial step of the CF dissolution in this device and there is no structural degradation before the reset point. This result can be evidenced by comparing the experimental and theoretical maximum CF temperature curves detailedly described in [22]. Figure 5 shows the experimental and theoretical reset temperature curves for two cycles of our Cu/HfO2/Pt device. In Figure 5, before the reset point, the two types of curves are exactly in coincidence, which indicates that the reset point just corresponds to the starting point of the CF dissolution. In consequence, the statistical results of Cu/HfO2/Pt RRAM device are compatible with the thermal dissolution model.Figure 5

Bottom Line: The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data.The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it.Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.

View Article: PubMed Central - PubMed

Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China, zhangmeiyun@ime.ac.cn.

ABSTRACT
A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switching property. The experimental observations show that the distributions of the reset voltage (V reset) and reset current (I reset) are greatly influenced by the initial on-state resistance (R on) which is closely related to the size of the conductive filament (CF) before the reset process. The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data. Using resistance screening method, the statistical data of the reset voltage and current are decomposed into several ranges and the distributions of them in each range are analyzed by the Weibull model. Both the Weibull slopes of the reset voltage and current are demonstrated to be independent of the on-state resistance which indicates that no CF dissolution occurs before the reset point. The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it. These behaviors are fully in consistency with the thermal dissolution model, which gives an insight on the physical mechanism of the reset switching. Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.

No MeSH data available.


Related in: MedlinePlus