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Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

Zhang M, Long S, Wang G, Liu R, Xu X, Li Y, Xu D, Liu Q, Lv H, Miranda E, Suñé J, Liu M - Nanoscale Res Lett (2014)

Bottom Line: The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data.The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it.Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.

View Article: PubMed Central - PubMed

Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China, zhangmeiyun@ime.ac.cn.

ABSTRACT
A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switching property. The experimental observations show that the distributions of the reset voltage (V reset) and reset current (I reset) are greatly influenced by the initial on-state resistance (R on) which is closely related to the size of the conductive filament (CF) before the reset process. The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data. Using resistance screening method, the statistical data of the reset voltage and current are decomposed into several ranges and the distributions of them in each range are analyzed by the Weibull model. Both the Weibull slopes of the reset voltage and current are demonstrated to be independent of the on-state resistance which indicates that no CF dissolution occurs before the reset point. The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it. These behaviors are fully in consistency with the thermal dissolution model, which gives an insight on the physical mechanism of the reset switching. Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.

No MeSH data available.


Related in: MedlinePlus

Experimental distributions ofIresetas a function ofRon. (a) Experimental distributions of Ireset in different Ron ranges in Weibull plot. (b) Distributions of Ireset with fitting lines in three Ron ranges. The fitting lines show that the experimental distributions are roughly compatible with Weibull distributions. (c) The Gumbel distribution of Ireset in the three Ron ranges same as those in (b). A small part of data fall into the circles, indicating that a small proportion of data belong to the tailing region of the distributions in (b). (d) The dependence of the Weibull slope and scale factor of Ireset distributions on Ron. The Weibull slope stays constant, and the scale factor decreases linearly with Ron.
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Fig4: Experimental distributions ofIresetas a function ofRon. (a) Experimental distributions of Ireset in different Ron ranges in Weibull plot. (b) Distributions of Ireset with fitting lines in three Ron ranges. The fitting lines show that the experimental distributions are roughly compatible with Weibull distributions. (c) The Gumbel distribution of Ireset in the three Ron ranges same as those in (b). A small part of data fall into the circles, indicating that a small proportion of data belong to the tailing region of the distributions in (b). (d) The dependence of the Weibull slope and scale factor of Ireset distributions on Ron. The Weibull slope stays constant, and the scale factor decreases linearly with Ron.

Mentions: Analogous to the study of the reset voltage, the reset current are analyzed in the same way. Figure 4a,b shows the Weibull distributions of Ireset in different Ron ranges with a certain high-percentile tails. These tails are also demonstrated to occupy only a small proportion by Gumbel distributions, as shown in Figure 4c. Through the linear fitting to the standard Weibull distributions, the abstracted Weibull slope and scale factor of the reset current distributions as a function of Ron are illustrated in Figure 4d. The Weibull slope of the reset current stays constant, and the scale factor decreases with Ron.Figure 4


Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

Zhang M, Long S, Wang G, Liu R, Xu X, Li Y, Xu D, Liu Q, Lv H, Miranda E, Suñé J, Liu M - Nanoscale Res Lett (2014)

Experimental distributions ofIresetas a function ofRon. (a) Experimental distributions of Ireset in different Ron ranges in Weibull plot. (b) Distributions of Ireset with fitting lines in three Ron ranges. The fitting lines show that the experimental distributions are roughly compatible with Weibull distributions. (c) The Gumbel distribution of Ireset in the three Ron ranges same as those in (b). A small part of data fall into the circles, indicating that a small proportion of data belong to the tailing region of the distributions in (b). (d) The dependence of the Weibull slope and scale factor of Ireset distributions on Ron. The Weibull slope stays constant, and the scale factor decreases linearly with Ron.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4493841&req=5

Fig4: Experimental distributions ofIresetas a function ofRon. (a) Experimental distributions of Ireset in different Ron ranges in Weibull plot. (b) Distributions of Ireset with fitting lines in three Ron ranges. The fitting lines show that the experimental distributions are roughly compatible with Weibull distributions. (c) The Gumbel distribution of Ireset in the three Ron ranges same as those in (b). A small part of data fall into the circles, indicating that a small proportion of data belong to the tailing region of the distributions in (b). (d) The dependence of the Weibull slope and scale factor of Ireset distributions on Ron. The Weibull slope stays constant, and the scale factor decreases linearly with Ron.
Mentions: Analogous to the study of the reset voltage, the reset current are analyzed in the same way. Figure 4a,b shows the Weibull distributions of Ireset in different Ron ranges with a certain high-percentile tails. These tails are also demonstrated to occupy only a small proportion by Gumbel distributions, as shown in Figure 4c. Through the linear fitting to the standard Weibull distributions, the abstracted Weibull slope and scale factor of the reset current distributions as a function of Ron are illustrated in Figure 4d. The Weibull slope of the reset current stays constant, and the scale factor decreases with Ron.Figure 4

Bottom Line: The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data.The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it.Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.

View Article: PubMed Central - PubMed

Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China, zhangmeiyun@ime.ac.cn.

ABSTRACT
A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switching property. The experimental observations show that the distributions of the reset voltage (V reset) and reset current (I reset) are greatly influenced by the initial on-state resistance (R on) which is closely related to the size of the conductive filament (CF) before the reset process. The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data. Using resistance screening method, the statistical data of the reset voltage and current are decomposed into several ranges and the distributions of them in each range are analyzed by the Weibull model. Both the Weibull slopes of the reset voltage and current are demonstrated to be independent of the on-state resistance which indicates that no CF dissolution occurs before the reset point. The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it. These behaviors are fully in consistency with the thermal dissolution model, which gives an insight on the physical mechanism of the reset switching. Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.

No MeSH data available.


Related in: MedlinePlus