Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.
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The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data.The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it.Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.
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PubMed Central - PubMed
Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China, zhangmeiyun@ime.ac.cn.
ABSTRACT
A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switching property. The experimental observations show that the distributions of the reset voltage (V reset) and reset current (I reset) are greatly influenced by the initial on-state resistance (R on) which is closely related to the size of the conductive filament (CF) before the reset process. The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data. Using resistance screening method, the statistical data of the reset voltage and current are decomposed into several ranges and the distributions of them in each range are analyzed by the Weibull model. Both the Weibull slopes of the reset voltage and current are demonstrated to be independent of the on-state resistance which indicates that no CF dissolution occurs before the reset point. The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it. These behaviors are fully in consistency with the thermal dissolution model, which gives an insight on the physical mechanism of the reset switching. Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices. No MeSH data available. Related in: MedlinePlus |
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Mentions: To further study the details of the relationship of Vreset and Ireset as a function of Ron, the resistance screening method is utilized through which Ron is reasonably divided into several ranges. The statistical distributions of Vreset and Ireset in different ranges decomposed by the resistance method are studied in detail. Figure 3a shows the experimental distributions of Vreset in different Ron ranges in the Weibull plot. Figure 3b shows the typical distributions of Vreset in three different resistance ranges with linear fitting lines. We can conclude that the Weibull distribution can be used to well describe the experimental distributions of Vreset and Ireset of the Cu/HfO2/Pt device. In Figure 3a,b, we find a high-percentile tail exists in the distribution in each Ron range, which is deviated from the standard Weibull distribution which is a straight line in the Weibull plot. Figure 3c shows the same three distributions in Figure 3b in the Gumbel plot, which can show more clearly the high-percentile tail region in the Weibull plot. As shown in Figure 3c, it can be seen that the experimental data in the high-percentile tail region in Figure 3b are just a very small part in the whole distribution in each range. Fitting all the experimental results in Figure 3a by linear Weibull distribution, the shape factors (i.e., the Weibull slopes) and the scale factors of Vreset distributions can be obtained. Figure 3d shows the dependence of the shape factor (βV) and scale factor (V63 %) of Vreset distributions on Ron. We can find that the Weibull slope of Vreset distribution remains constant and the scale factor of the Vreset distributions increases with Ron.Figure 3 |
View Article: PubMed Central - PubMed
Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China, zhangmeiyun@ime.ac.cn.
No MeSH data available.