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Tunnel junction based memristors as artificial synapses.

Thomas A, Niehörster S, Fabretti S, Shepheard N, Kuschel O, Küpper K, Wollschläger J, Krzysteczko P, Chicca E - Front Neurosci (2015)

Bottom Line: The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use.Here, we increased the amplitude of the resistance change from 10% up to 100%.Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses.

View Article: PubMed Central - PubMed

Affiliation: Thin Films and Physics of Nanostructures, Bielefeld University Bielefeld, Germany ; IFW Dresden, Institute for Metallic Materials Dresden, Germany.

ABSTRACT
We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms.

No MeSH data available.


Related in: MedlinePlus

Current-voltage characteristics of a BTO based tunnel junction. The measurement sequence is a, b, c at an applied voltage range of −300 to 300 mV. The hysteresis loop shows a type II non-crossing hysteresis.
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Figure 5: Current-voltage characteristics of a BTO based tunnel junction. The measurement sequence is a, b, c at an applied voltage range of −300 to 300 mV. The hysteresis loop shows a type II non-crossing hysteresis.

Mentions: Figure 5 shows a tunneling hysteresis loop in the applied dc bias range of −300 to 300 mV for TS = 737°C. The measured sequence was from 0 mV up to 300 mV, down to −300 mV and back to 0 mV. The time between each data point was 200 ms. The figure displays the pinched hysteresis loop characteristic for all memristors (Chua, 2014). According to the theoretical overview of Pershin et al., memristors can be categorized into two types (Pershin and Di Ventra, 2011): Self crossing and non-self-crossing, i.e., the two branches of the hysteresis loop do or do not cross each other.


Tunnel junction based memristors as artificial synapses.

Thomas A, Niehörster S, Fabretti S, Shepheard N, Kuschel O, Küpper K, Wollschläger J, Krzysteczko P, Chicca E - Front Neurosci (2015)

Current-voltage characteristics of a BTO based tunnel junction. The measurement sequence is a, b, c at an applied voltage range of −300 to 300 mV. The hysteresis loop shows a type II non-crossing hysteresis.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4493388&req=5

Figure 5: Current-voltage characteristics of a BTO based tunnel junction. The measurement sequence is a, b, c at an applied voltage range of −300 to 300 mV. The hysteresis loop shows a type II non-crossing hysteresis.
Mentions: Figure 5 shows a tunneling hysteresis loop in the applied dc bias range of −300 to 300 mV for TS = 737°C. The measured sequence was from 0 mV up to 300 mV, down to −300 mV and back to 0 mV. The time between each data point was 200 ms. The figure displays the pinched hysteresis loop characteristic for all memristors (Chua, 2014). According to the theoretical overview of Pershin et al., memristors can be categorized into two types (Pershin and Di Ventra, 2011): Self crossing and non-self-crossing, i.e., the two branches of the hysteresis loop do or do not cross each other.

Bottom Line: The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use.Here, we increased the amplitude of the resistance change from 10% up to 100%.Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses.

View Article: PubMed Central - PubMed

Affiliation: Thin Films and Physics of Nanostructures, Bielefeld University Bielefeld, Germany ; IFW Dresden, Institute for Metallic Materials Dresden, Germany.

ABSTRACT
We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms.

No MeSH data available.


Related in: MedlinePlus