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Tunnel junction based memristors as artificial synapses.

Thomas A, Niehörster S, Fabretti S, Shepheard N, Kuschel O, Küpper K, Wollschläger J, Krzysteczko P, Chicca E - Front Neurosci (2015)

Bottom Line: The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use.Here, we increased the amplitude of the resistance change from 10% up to 100%.Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses.

View Article: PubMed Central - PubMed

Affiliation: Thin Films and Physics of Nanostructures, Bielefeld University Bielefeld, Germany ; IFW Dresden, Institute for Metallic Materials Dresden, Germany.

ABSTRACT
We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms.

No MeSH data available.


Related in: MedlinePlus

X-ray diffraction pattern of the barium titanate films at different deposition temperatures on MgO substrates. An increase of the 002 and 004 BTO-peaks is observed with increasing substrate temperature.
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Figure 2: X-ray diffraction pattern of the barium titanate films at different deposition temperatures on MgO substrates. An increase of the 002 and 004 BTO-peaks is observed with increasing substrate temperature.

Mentions: Figure 2 shows the XRD patterns of the BTO films deposited at the given temperature TS. Both the BTO (002) and the BTO (004) peak intensities increase with increasing temperature up to 918°C. Furthermore, the position of the BTO (002) peak shifts from 44.425° at TS = 689°C to 45.925°C at TS = 918°C, corresponding to a decrease in the c-axis lattice constant from 4.078 Å down to 3.954 Å, which is shown in detail in Table 1.


Tunnel junction based memristors as artificial synapses.

Thomas A, Niehörster S, Fabretti S, Shepheard N, Kuschel O, Küpper K, Wollschläger J, Krzysteczko P, Chicca E - Front Neurosci (2015)

X-ray diffraction pattern of the barium titanate films at different deposition temperatures on MgO substrates. An increase of the 002 and 004 BTO-peaks is observed with increasing substrate temperature.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4493388&req=5

Figure 2: X-ray diffraction pattern of the barium titanate films at different deposition temperatures on MgO substrates. An increase of the 002 and 004 BTO-peaks is observed with increasing substrate temperature.
Mentions: Figure 2 shows the XRD patterns of the BTO films deposited at the given temperature TS. Both the BTO (002) and the BTO (004) peak intensities increase with increasing temperature up to 918°C. Furthermore, the position of the BTO (002) peak shifts from 44.425° at TS = 689°C to 45.925°C at TS = 918°C, corresponding to a decrease in the c-axis lattice constant from 4.078 Å down to 3.954 Å, which is shown in detail in Table 1.

Bottom Line: The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use.Here, we increased the amplitude of the resistance change from 10% up to 100%.Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses.

View Article: PubMed Central - PubMed

Affiliation: Thin Films and Physics of Nanostructures, Bielefeld University Bielefeld, Germany ; IFW Dresden, Institute for Metallic Materials Dresden, Germany.

ABSTRACT
We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms.

No MeSH data available.


Related in: MedlinePlus