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Ultralow noise miniature external cavity semiconductor laser.

Liang W, Ilchenko VS, Eliyahu D, Savchenkov AA, Matsko AB, Seidel D, Maleki L - Nat Commun (2015)

Bottom Line: Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations.However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance.In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth.

View Article: PubMed Central - PubMed

Affiliation: OEwaves Inc., 465 North Halstead Street, Suite 140, Pasadena, California 91107, USA.

ABSTRACT
Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with optical microresonators as external cavities have the potential for substantial reduction of noise. However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance. In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth.

No MeSH data available.


Related in: MedlinePlus

Spectral purity and stability characteristics of the laser.(a) Linear frequency noise of the RF beat note of the lasers, (1) compared with the noise determined by conversion of the laser power fluctuations to the frequency fluctuations, (2) as well as fundamental thermorefractive, (3) and thermoexpansive (4) noise. (b) Allan deviation interpolated using the frequency noise data (1) and actual measurement of the Allan deviation (2). The 500-s peak in curve (2) results from the air conditioner cycle in the laboratory. This systematic frequency shift exceeds the internal laser noise rather significantly.
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f3: Spectral purity and stability characteristics of the laser.(a) Linear frequency noise of the RF beat note of the lasers, (1) compared with the noise determined by conversion of the laser power fluctuations to the frequency fluctuations, (2) as well as fundamental thermorefractive, (3) and thermoexpansive (4) noise. (b) Allan deviation interpolated using the frequency noise data (1) and actual measurement of the Allan deviation (2). The 500-s peak in curve (2) results from the air conditioner cycle in the laboratory. This systematic frequency shift exceeds the internal laser noise rather significantly.

Mentions: The results of frequency noise measurement of the RF signal are presented by line (1) in Fig. 3. The figure shows that the instantaneous linewidth of the beat note, defined as (here Sν is the floor of the frequency noise shown in Fig. 3), is less than 0.1 Hz. The free running laser has 2 MHz instantaneous linewidth (see inset in Fig. 3). This demonstrates that self-injection locking improved the DFB laser linewidth by nearly seven orders of magnitude.


Ultralow noise miniature external cavity semiconductor laser.

Liang W, Ilchenko VS, Eliyahu D, Savchenkov AA, Matsko AB, Seidel D, Maleki L - Nat Commun (2015)

Spectral purity and stability characteristics of the laser.(a) Linear frequency noise of the RF beat note of the lasers, (1) compared with the noise determined by conversion of the laser power fluctuations to the frequency fluctuations, (2) as well as fundamental thermorefractive, (3) and thermoexpansive (4) noise. (b) Allan deviation interpolated using the frequency noise data (1) and actual measurement of the Allan deviation (2). The 500-s peak in curve (2) results from the air conditioner cycle in the laboratory. This systematic frequency shift exceeds the internal laser noise rather significantly.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4491184&req=5

f3: Spectral purity and stability characteristics of the laser.(a) Linear frequency noise of the RF beat note of the lasers, (1) compared with the noise determined by conversion of the laser power fluctuations to the frequency fluctuations, (2) as well as fundamental thermorefractive, (3) and thermoexpansive (4) noise. (b) Allan deviation interpolated using the frequency noise data (1) and actual measurement of the Allan deviation (2). The 500-s peak in curve (2) results from the air conditioner cycle in the laboratory. This systematic frequency shift exceeds the internal laser noise rather significantly.
Mentions: The results of frequency noise measurement of the RF signal are presented by line (1) in Fig. 3. The figure shows that the instantaneous linewidth of the beat note, defined as (here Sν is the floor of the frequency noise shown in Fig. 3), is less than 0.1 Hz. The free running laser has 2 MHz instantaneous linewidth (see inset in Fig. 3). This demonstrates that self-injection locking improved the DFB laser linewidth by nearly seven orders of magnitude.

Bottom Line: Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations.However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance.In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth.

View Article: PubMed Central - PubMed

Affiliation: OEwaves Inc., 465 North Halstead Street, Suite 140, Pasadena, California 91107, USA.

ABSTRACT
Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with optical microresonators as external cavities have the potential for substantial reduction of noise. However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance. In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth.

No MeSH data available.


Related in: MedlinePlus