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Lead iodide perovskite light-emitting field-effect transistor.

Chin XY, Cortecchia D, Yin J, Bruno A, Soci C - Nat Commun (2015)

Bottom Line: Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors.Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport.This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

View Article: PubMed Central - PubMed

Affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.

ABSTRACT
Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

No MeSH data available.


FET device configuration and thin-film characterization.(a,b) Cross-sectional (a) and top-view (b) scanning electron miscroscope micrographs of the CH3NH3PbI3 thin film. Scale bars, 1 μm. (c) X-ray diffraction pattern of CH3NH3PbI3 film on SiO2/Si(p++) substrate, confirming the tetragonal structure of the perovskite and space group I4/mcm. (d) Schematic of the bottom-gate, bottom contact LE-FET configuration used in this study.
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f1: FET device configuration and thin-film characterization.(a,b) Cross-sectional (a) and top-view (b) scanning electron miscroscope micrographs of the CH3NH3PbI3 thin film. Scale bars, 1 μm. (c) X-ray diffraction pattern of CH3NH3PbI3 film on SiO2/Si(p++) substrate, confirming the tetragonal structure of the perovskite and space group I4/mcm. (d) Schematic of the bottom-gate, bottom contact LE-FET configuration used in this study.

Mentions: Deposition methods of solution-processed organo-lead hybrid perovskite have direct consequences on the morphology of thin film, hence on charge transport properties of the material2. Here we used the solvent engineering technique recently reported for optimized solar cell fabrication14 to deposit a compact and uniform CH3NH3PbI3 perovskite layer (∼150 nm thick) on top of heavily p-doped Si with thermally grown SiO2 (Fig. 1a). The resulting thin films are of very high quality: they consist of closely packed, large domains with grain size up to 200 nm, as seen in the top view scanning electron microscope (SEM) image in Fig. 1b. They crystallize in a perfect tetragonal structure, as revealed by the X-ray diffraction analysis in Fig. 1c. A film roughness of RRMS=10.8 nm was evaluated by atomic force microscopy (AFM; Supplementary Fig. 1). Availability of such high-quality films is essential to minimize the influence of metal contacts and charge carrier scattering across the film, so as to obtain intrinsic transport parameters from FET measurements. The device structure used in this study is shown in Fig. 1d. A bottom gate, bottom contact configuration was employed to allow deposition of active materials to be the last step in the fabrication. This is to minimize exposure of CH3NH3PbI3 to moisture in the environment, and to avoid potential overheating during the metal electrode deposition.


Lead iodide perovskite light-emitting field-effect transistor.

Chin XY, Cortecchia D, Yin J, Bruno A, Soci C - Nat Commun (2015)

FET device configuration and thin-film characterization.(a,b) Cross-sectional (a) and top-view (b) scanning electron miscroscope micrographs of the CH3NH3PbI3 thin film. Scale bars, 1 μm. (c) X-ray diffraction pattern of CH3NH3PbI3 film on SiO2/Si(p++) substrate, confirming the tetragonal structure of the perovskite and space group I4/mcm. (d) Schematic of the bottom-gate, bottom contact LE-FET configuration used in this study.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4491174&req=5

f1: FET device configuration and thin-film characterization.(a,b) Cross-sectional (a) and top-view (b) scanning electron miscroscope micrographs of the CH3NH3PbI3 thin film. Scale bars, 1 μm. (c) X-ray diffraction pattern of CH3NH3PbI3 film on SiO2/Si(p++) substrate, confirming the tetragonal structure of the perovskite and space group I4/mcm. (d) Schematic of the bottom-gate, bottom contact LE-FET configuration used in this study.
Mentions: Deposition methods of solution-processed organo-lead hybrid perovskite have direct consequences on the morphology of thin film, hence on charge transport properties of the material2. Here we used the solvent engineering technique recently reported for optimized solar cell fabrication14 to deposit a compact and uniform CH3NH3PbI3 perovskite layer (∼150 nm thick) on top of heavily p-doped Si with thermally grown SiO2 (Fig. 1a). The resulting thin films are of very high quality: they consist of closely packed, large domains with grain size up to 200 nm, as seen in the top view scanning electron microscope (SEM) image in Fig. 1b. They crystallize in a perfect tetragonal structure, as revealed by the X-ray diffraction analysis in Fig. 1c. A film roughness of RRMS=10.8 nm was evaluated by atomic force microscopy (AFM; Supplementary Fig. 1). Availability of such high-quality films is essential to minimize the influence of metal contacts and charge carrier scattering across the film, so as to obtain intrinsic transport parameters from FET measurements. The device structure used in this study is shown in Fig. 1d. A bottom gate, bottom contact configuration was employed to allow deposition of active materials to be the last step in the fabrication. This is to minimize exposure of CH3NH3PbI3 to moisture in the environment, and to avoid potential overheating during the metal electrode deposition.

Bottom Line: Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors.Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport.This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

View Article: PubMed Central - PubMed

Affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.

ABSTRACT
Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

No MeSH data available.