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Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.

Li W, Wang S, Hu M, He S, Ge P, Wang J, Guo YY, Zhaowei L - Sci Rep (2015)

Bottom Line: The result shows that electroluminescence intensity was significantly enhanced.And, the turn-on voltage of the luminescent device was reduced to 3 V.The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures.

View Article: PubMed Central - PubMed

Affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China [3] Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA.

ABSTRACT
In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

No MeSH data available.


AFM of Pt nanoparticles coated Si nanopillar.
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f2: AFM of Pt nanoparticles coated Si nanopillar.

Mentions: To get more information on the surface morphology, the samples were characterized by atomic force microscopy (AFM). Figure 2 shows the AFM image of embedded Si quantum dots /SiO2 film on Pt NP-coated Si nanopillar arrays substrate. As can be seen in this image, the pillars are quite uniform. The period constant is 220 nm which corresponds to the diameter of the PS spheres used here. The mean full width at half maximum (FWHM) of the nanopillar is estimated to be 50 nm, with 100 nm height.


Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.

Li W, Wang S, Hu M, He S, Ge P, Wang J, Guo YY, Zhaowei L - Sci Rep (2015)

AFM of Pt nanoparticles coated Si nanopillar.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4490393&req=5

f2: AFM of Pt nanoparticles coated Si nanopillar.
Mentions: To get more information on the surface morphology, the samples were characterized by atomic force microscopy (AFM). Figure 2 shows the AFM image of embedded Si quantum dots /SiO2 film on Pt NP-coated Si nanopillar arrays substrate. As can be seen in this image, the pillars are quite uniform. The period constant is 220 nm which corresponds to the diameter of the PS spheres used here. The mean full width at half maximum (FWHM) of the nanopillar is estimated to be 50 nm, with 100 nm height.

Bottom Line: The result shows that electroluminescence intensity was significantly enhanced.And, the turn-on voltage of the luminescent device was reduced to 3 V.The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures.

View Article: PubMed Central - PubMed

Affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China [3] Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA.

ABSTRACT
In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

No MeSH data available.