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Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.

Li W, Wang S, Hu M, He S, Ge P, Wang J, Guo YY, Zhaowei L - Sci Rep (2015)

Bottom Line: The result shows that electroluminescence intensity was significantly enhanced.And, the turn-on voltage of the luminescent device was reduced to 3 V.The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures.

View Article: PubMed Central - PubMed

Affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China [3] Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA.

ABSTRACT
In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

No MeSH data available.


SEM image of single layer of PS spheres(a), Pt nanoparticles (b) Pt nanoparticles coated Si nanopillar (c) and the schematic diagram of electroluminescent structures (d).
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f1: SEM image of single layer of PS spheres(a), Pt nanoparticles (b) Pt nanoparticles coated Si nanopillar (c) and the schematic diagram of electroluminescent structures (d).

Mentions: The ordered Si nanopillar array substrate was fabricated by nanosphere lithography. It was reported in our previous paper192021. In the first step, a single layer of polystyrene (PS) spheres with diameter of 220 nm was covered on the P-Si substrate (Fig. 1(a)). Second, a Pt film with 30 nm thickness was deposited on this sample by metal sputtering. After removing the PS spheres, the substrate was dry-etched in reactive ion etching (RIE) system by using 40 sccm CHF3 gas under RF power of 20 W(Fig. 1(b)). Then, the Pt NP-coated Si nanopillar array was obtained (Fig. 1(c)).


Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.

Li W, Wang S, Hu M, He S, Ge P, Wang J, Guo YY, Zhaowei L - Sci Rep (2015)

SEM image of single layer of PS spheres(a), Pt nanoparticles (b) Pt nanoparticles coated Si nanopillar (c) and the schematic diagram of electroluminescent structures (d).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4490393&req=5

f1: SEM image of single layer of PS spheres(a), Pt nanoparticles (b) Pt nanoparticles coated Si nanopillar (c) and the schematic diagram of electroluminescent structures (d).
Mentions: The ordered Si nanopillar array substrate was fabricated by nanosphere lithography. It was reported in our previous paper192021. In the first step, a single layer of polystyrene (PS) spheres with diameter of 220 nm was covered on the P-Si substrate (Fig. 1(a)). Second, a Pt film with 30 nm thickness was deposited on this sample by metal sputtering. After removing the PS spheres, the substrate was dry-etched in reactive ion etching (RIE) system by using 40 sccm CHF3 gas under RF power of 20 W(Fig. 1(b)). Then, the Pt NP-coated Si nanopillar array was obtained (Fig. 1(c)).

Bottom Line: The result shows that electroluminescence intensity was significantly enhanced.And, the turn-on voltage of the luminescent device was reduced to 3 V.The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures.

View Article: PubMed Central - PubMed

Affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China [3] Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA.

ABSTRACT
In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

No MeSH data available.