Limits...
Graphene-Based Flexible and Transparent Tunable Capacitors.

Man B, Xu S, Jiang S, Liu A, Gao S, Zhang C, Qiu H, Li Z - Nanoscale Res Lett (2015)

Bottom Line: The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm.Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm.This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

View Article: PubMed Central - PubMed

Affiliation: College of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China, byman@sdnu.edu.cn.

ABSTRACT
We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

No MeSH data available.


Related in: MedlinePlus

a The bias-field dependence of the dielectric properties of BMN films at 550–800 °C. b The tunability and loss tangent of BMN film grown on graphene and Au at 750 °C. c The leakage current density versus electrical field for the BMN films grown on graphene and Au substrate. d Measured dielectric constant versus bias-field at the flat and bending conditions with curvature radii from 30 to 3 mm. The top left inset presents the homemade mechanical device for the bending test
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4489973&req=5

Fig8: a The bias-field dependence of the dielectric properties of BMN films at 550–800 °C. b The tunability and loss tangent of BMN film grown on graphene and Au at 750 °C. c The leakage current density versus electrical field for the BMN films grown on graphene and Au substrate. d Measured dielectric constant versus bias-field at the flat and bending conditions with curvature radii from 30 to 3 mm. The top left inset presents the homemade mechanical device for the bending test

Mentions: Figure 8a shows the tunability of the capacitor measured at 1 MHz. The dielectric constant ε is calculated from the capacitance C:Fig 8


Graphene-Based Flexible and Transparent Tunable Capacitors.

Man B, Xu S, Jiang S, Liu A, Gao S, Zhang C, Qiu H, Li Z - Nanoscale Res Lett (2015)

a The bias-field dependence of the dielectric properties of BMN films at 550–800 °C. b The tunability and loss tangent of BMN film grown on graphene and Au at 750 °C. c The leakage current density versus electrical field for the BMN films grown on graphene and Au substrate. d Measured dielectric constant versus bias-field at the flat and bending conditions with curvature radii from 30 to 3 mm. The top left inset presents the homemade mechanical device for the bending test
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4489973&req=5

Fig8: a The bias-field dependence of the dielectric properties of BMN films at 550–800 °C. b The tunability and loss tangent of BMN film grown on graphene and Au at 750 °C. c The leakage current density versus electrical field for the BMN films grown on graphene and Au substrate. d Measured dielectric constant versus bias-field at the flat and bending conditions with curvature radii from 30 to 3 mm. The top left inset presents the homemade mechanical device for the bending test
Mentions: Figure 8a shows the tunability of the capacitor measured at 1 MHz. The dielectric constant ε is calculated from the capacitance C:Fig 8

Bottom Line: The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm.Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm.This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

View Article: PubMed Central - PubMed

Affiliation: College of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China, byman@sdnu.edu.cn.

ABSTRACT
We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

No MeSH data available.


Related in: MedlinePlus