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Design of an Embedded CMOS Temperature Sensor for Passive RFID Tag Chips.

Deng F, He Y, Li B, Zhang L, Wu X, Fu Z, Zuo L - Sensors (Basel) (2015)

Bottom Line: A phase locked loop (PLL)-based sensor interface is employed to directly convert this temperature-controlled frequency into a corresponding digital output without an external reference clock.The fabricated sensor occupies an area of 0.021 mm2 using the TSMC 0.18 1P6M mixed-signal CMOS process.Measurement results of the embedded sensor within the tag system shows a 92 nW power dissipation under 1.0 V supply voltage at room temperature, with a sensing resolution of 0.15 °C/LSB and a sensing accuracy of -0.7/0.6 °C from -30 °C to 70 °C after 1-point calibration at 30 °C.

View Article: PubMed Central - PubMed

Affiliation: School of Electrical and Electronic Engineering, East China Jiaotong University, Nanchang 330013, China. dengfm1980@sina.cn.

ABSTRACT
This paper presents an ultra-low embedded power temperature sensor for passive RFID tags. The temperature sensor converts the temperature variation to a PTAT current, which is then transformed into a temperature-controlled frequency. A phase locked loop (PLL)-based sensor interface is employed to directly convert this temperature-controlled frequency into a corresponding digital output without an external reference clock. The fabricated sensor occupies an area of 0.021 mm2 using the TSMC 0.18 1P6M mixed-signal CMOS process. Measurement results of the embedded sensor within the tag system shows a 92 nW power dissipation under 1.0 V supply voltage at room temperature, with a sensing resolution of 0.15 °C/LSB and a sensing accuracy of -0.7/0.6 °C from -30 °C to 70 °C after 1-point calibration at 30 °C.

No MeSH data available.


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Simulation results of current vs. temperature on different process corners.
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sensors-15-11442-f004: Simulation results of current vs. temperature on different process corners.

Mentions: Equation (5) shows that the produced voltage is a CTAT voltage which also tracks supply voltage variations. Hence the output current It is the PV-compensated PTAT current source. The simulation results of the proposed PTAT current source on different process corners are shown in Figure 4. The It achieves good linearity with temperature and the simulated worst case variation across corners is ±4.5%.


Design of an Embedded CMOS Temperature Sensor for Passive RFID Tag Chips.

Deng F, He Y, Li B, Zhang L, Wu X, Fu Z, Zuo L - Sensors (Basel) (2015)

Simulation results of current vs. temperature on different process corners.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4481890&req=5

sensors-15-11442-f004: Simulation results of current vs. temperature on different process corners.
Mentions: Equation (5) shows that the produced voltage is a CTAT voltage which also tracks supply voltage variations. Hence the output current It is the PV-compensated PTAT current source. The simulation results of the proposed PTAT current source on different process corners are shown in Figure 4. The It achieves good linearity with temperature and the simulated worst case variation across corners is ±4.5%.

Bottom Line: A phase locked loop (PLL)-based sensor interface is employed to directly convert this temperature-controlled frequency into a corresponding digital output without an external reference clock.The fabricated sensor occupies an area of 0.021 mm2 using the TSMC 0.18 1P6M mixed-signal CMOS process.Measurement results of the embedded sensor within the tag system shows a 92 nW power dissipation under 1.0 V supply voltage at room temperature, with a sensing resolution of 0.15 °C/LSB and a sensing accuracy of -0.7/0.6 °C from -30 °C to 70 °C after 1-point calibration at 30 °C.

View Article: PubMed Central - PubMed

Affiliation: School of Electrical and Electronic Engineering, East China Jiaotong University, Nanchang 330013, China. dengfm1980@sina.cn.

ABSTRACT
This paper presents an ultra-low embedded power temperature sensor for passive RFID tags. The temperature sensor converts the temperature variation to a PTAT current, which is then transformed into a temperature-controlled frequency. A phase locked loop (PLL)-based sensor interface is employed to directly convert this temperature-controlled frequency into a corresponding digital output without an external reference clock. The fabricated sensor occupies an area of 0.021 mm2 using the TSMC 0.18 1P6M mixed-signal CMOS process. Measurement results of the embedded sensor within the tag system shows a 92 nW power dissipation under 1.0 V supply voltage at room temperature, with a sensing resolution of 0.15 °C/LSB and a sensing accuracy of -0.7/0.6 °C from -30 °C to 70 °C after 1-point calibration at 30 °C.

No MeSH data available.


Related in: MedlinePlus