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ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.


(a) Nyquist and (b) Bode phase plots of cells based on GZOSC and FTO photoanodes. Inset: the equivalent circuit of the DSSCs.
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f6: (a) Nyquist and (b) Bode phase plots of cells based on GZOSC and FTO photoanodes. Inset: the equivalent circuit of the DSSCs.

Mentions: To investigate the differences in the electron-transport with different photoanodes and the interfacial charge recombination of the DSSCs, electrochemical impedance spectra (EIS) of two cells made of different photoanodes were measured. Figure 6a shows Nyquist plots of the impedance data for the cells based GZOSC and FTO in the dark by applying 5 mV AC-signal amplitude with an applied bias voltage of 0.6 V. The inset is the equivalent circuit252627. There is one semicircle in the frequency range of 50 mHz to 1 MHz. As shown in Fig. 6, the series resistance (Rs) for GZOSC and FTO shows no obvious difference but the fitting values of Rs(GZO) and Rs(FTO) are 0.57 Ω and 1.67 Ω, respectively. The fitting impedance for the charge recombination RRec of GZOSC-based DSSCs is 168.7 Ω, much larger than the value of FTO-based DSSCs (80.8 Ω), indicating less interfacial charge recombination within the GZOSC-based DSSCs, in which the injected electrons are extracted more effectively. It is known that the frequency is related to the electron lifetime (τn), which can be estimated by using the relation:


ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

(a) Nyquist and (b) Bode phase plots of cells based on GZOSC and FTO photoanodes. Inset: the equivalent circuit of the DSSCs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4477229&req=5

f6: (a) Nyquist and (b) Bode phase plots of cells based on GZOSC and FTO photoanodes. Inset: the equivalent circuit of the DSSCs.
Mentions: To investigate the differences in the electron-transport with different photoanodes and the interfacial charge recombination of the DSSCs, electrochemical impedance spectra (EIS) of two cells made of different photoanodes were measured. Figure 6a shows Nyquist plots of the impedance data for the cells based GZOSC and FTO in the dark by applying 5 mV AC-signal amplitude with an applied bias voltage of 0.6 V. The inset is the equivalent circuit252627. There is one semicircle in the frequency range of 50 mHz to 1 MHz. As shown in Fig. 6, the series resistance (Rs) for GZOSC and FTO shows no obvious difference but the fitting values of Rs(GZO) and Rs(FTO) are 0.57 Ω and 1.67 Ω, respectively. The fitting impedance for the charge recombination RRec of GZOSC-based DSSCs is 168.7 Ω, much larger than the value of FTO-based DSSCs (80.8 Ω), indicating less interfacial charge recombination within the GZOSC-based DSSCs, in which the injected electrons are extracted more effectively. It is known that the frequency is related to the electron lifetime (τn), which can be estimated by using the relation:

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.