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ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.


IPCE spectra for the DSSCs with different photoanode.
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f5: IPCE spectra for the DSSCs with different photoanode.

Mentions: The incident-photon-to-current conversion efficiency (IPCE), defined as the number of electrons generated by light in the external circuit divided by the number of incident photons, is plotted as a function of excitation wavelength in Fig. 5. From the IPCE spectra of different DSSCs, it can be observed that the GZOSC-based DSSCs exhibit a photo-response over the wavelength range of 400–750 nm with a maximum value at 520 nm. Obviously, the IPCE value of GZOSC-based DSSCs (19.0%) is much higher than that of FTO-based DSSCs (8.2%) in the wavelength range of 400–750 nm. The higher IPCE implies that the sensitized GZOSC-based photoanode is more efficient than sensitized FTO-based photoanode in transmitting and/or collecting photo-excited electrons. This trend was in agreement with the variation of Jsc and η (see in Table 1)


ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

IPCE spectra for the DSSCs with different photoanode.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4477229&req=5

f5: IPCE spectra for the DSSCs with different photoanode.
Mentions: The incident-photon-to-current conversion efficiency (IPCE), defined as the number of electrons generated by light in the external circuit divided by the number of incident photons, is plotted as a function of excitation wavelength in Fig. 5. From the IPCE spectra of different DSSCs, it can be observed that the GZOSC-based DSSCs exhibit a photo-response over the wavelength range of 400–750 nm with a maximum value at 520 nm. Obviously, the IPCE value of GZOSC-based DSSCs (19.0%) is much higher than that of FTO-based DSSCs (8.2%) in the wavelength range of 400–750 nm. The higher IPCE implies that the sensitized GZOSC-based photoanode is more efficient than sensitized FTO-based photoanode in transmitting and/or collecting photo-excited electrons. This trend was in agreement with the variation of Jsc and η (see in Table 1)

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.