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ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.


Photocurrent density–voltage curves of DSSCs with different photoanodes.The measurement was performed under 1 sun illumination.
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f4: Photocurrent density–voltage curves of DSSCs with different photoanodes.The measurement was performed under 1 sun illumination.

Mentions: I–V curves related to GZOSC-based DSSCs and FTO-based DSSCs are plotted in Fig. 4 and the parameters are listed in Table 1, indicating that the performance of GZOSC-based DSSCs is much better than that of FTO-based DSSCs. The photocurrent density of GZOSC-based DSSCs is close to twice of the FTO-based DSSCs. The better performance of the GZOSC-based DSSCs might be due to the high quality of the ZnO nanowire arrays and the interface between the nanowires and the substrate.


ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

Photocurrent density–voltage curves of DSSCs with different photoanodes.The measurement was performed under 1 sun illumination.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4477229&req=5

f4: Photocurrent density–voltage curves of DSSCs with different photoanodes.The measurement was performed under 1 sun illumination.
Mentions: I–V curves related to GZOSC-based DSSCs and FTO-based DSSCs are plotted in Fig. 4 and the parameters are listed in Table 1, indicating that the performance of GZOSC-based DSSCs is much better than that of FTO-based DSSCs. The photocurrent density of GZOSC-based DSSCs is close to twice of the FTO-based DSSCs. The better performance of the GZOSC-based DSSCs might be due to the high quality of the ZnO nanowire arrays and the interface between the nanowires and the substrate.

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.