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ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.


(a) XRD spectrum of the ZnO nanowire array/FTO photoanode. (b) Top view SEM image of the photoanode (the upper right inset gives its enlarged image). (c) HRTEM image of the ZnO nanowire taken from FTO based photoanode (Low-resolution TEM image was shown in the inset).
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f3: (a) XRD spectrum of the ZnO nanowire array/FTO photoanode. (b) Top view SEM image of the photoanode (the upper right inset gives its enlarged image). (c) HRTEM image of the ZnO nanowire taken from FTO based photoanode (Low-resolution TEM image was shown in the inset).

Mentions: For comparison, DSSCs using ZnO nanowires/FTO photoanode has also been fabricated by growing ZnO nanowires on FTO substrates in the same growth conditions. The transmittance spectrum and electrical property of GZOSC and FTO conductive substrate are illustrated in the supplementary information. The electrical and optical properties suggest that GZOSC is very suitable as a transparent collector electrode. The XRD pattern of the ZnO nanowires/FTO photoanode displays many peaks which can be indexed to pure wurtzite structure of ZnO (JCPDS card: 79–0207), except those from the FTO substrate labeled with star (see Fig. 3a). The peaks in the XRD pattern demonstrate that the ZnO nanowires are grown disorderly on the FTO substrate. Top view SEM image verifies the results from the XRD pattern, and shows that the morphology of the ZnO nanowires on FTO is irregular (see Fig. 3b). ZnO nanowires on FTO are also demonstrated to have inferior crystallinity compared to those grown on single craystal GZO through the detailed examination by TEM (see Fig. 3c). From the characterization of XRD, SEM and TEM, the ZnO nanowires grown on GZOSC are demonstrated to have better crystallinity compared to those grown on FTO.


ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

(a) XRD spectrum of the ZnO nanowire array/FTO photoanode. (b) Top view SEM image of the photoanode (the upper right inset gives its enlarged image). (c) HRTEM image of the ZnO nanowire taken from FTO based photoanode (Low-resolution TEM image was shown in the inset).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4477229&req=5

f3: (a) XRD spectrum of the ZnO nanowire array/FTO photoanode. (b) Top view SEM image of the photoanode (the upper right inset gives its enlarged image). (c) HRTEM image of the ZnO nanowire taken from FTO based photoanode (Low-resolution TEM image was shown in the inset).
Mentions: For comparison, DSSCs using ZnO nanowires/FTO photoanode has also been fabricated by growing ZnO nanowires on FTO substrates in the same growth conditions. The transmittance spectrum and electrical property of GZOSC and FTO conductive substrate are illustrated in the supplementary information. The electrical and optical properties suggest that GZOSC is very suitable as a transparent collector electrode. The XRD pattern of the ZnO nanowires/FTO photoanode displays many peaks which can be indexed to pure wurtzite structure of ZnO (JCPDS card: 79–0207), except those from the FTO substrate labeled with star (see Fig. 3a). The peaks in the XRD pattern demonstrate that the ZnO nanowires are grown disorderly on the FTO substrate. Top view SEM image verifies the results from the XRD pattern, and shows that the morphology of the ZnO nanowires on FTO is irregular (see Fig. 3b). ZnO nanowires on FTO are also demonstrated to have inferior crystallinity compared to those grown on single craystal GZO through the detailed examination by TEM (see Fig. 3c). From the characterization of XRD, SEM and TEM, the ZnO nanowires grown on GZOSC are demonstrated to have better crystallinity compared to those grown on FTO.

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.