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ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.


(a) XRD spectrum of the ZnO nanowire array/GZOSC photoanode. (b) Top view SEM image of the photoanode. (c) Cross-sectional SEM images of the photoanode. (d) Low-resolution TEM image of two individual ZnO nanowire in the photoanode and the upper left inset gives its corresponding SAED pattern. (e) HRTEM image taken from the area marked with the red frame in (d).
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f2: (a) XRD spectrum of the ZnO nanowire array/GZOSC photoanode. (b) Top view SEM image of the photoanode. (c) Cross-sectional SEM images of the photoanode. (d) Low-resolution TEM image of two individual ZnO nanowire in the photoanode and the upper left inset gives its corresponding SAED pattern. (e) HRTEM image taken from the area marked with the red frame in (d).

Mentions: Figure 2a shows the XRD pattern of the ZnO nanowire/GZOSC photoanode. Two sharp narrow peaks at 34.4° and 72.4° in Fig. 2a can be indexed to a single crystalline wurtzite structure of ZnO. The dominated (002) peaks indicate an upstanding ZnO nanowire arrays along the c-axis. The XRD patterns of bare GZOSC and ZnO nanowire/GZOSC shown in the Figure S1 indicate that GZOSC has almost the same lattice parameter as pure ZnO. Top view SEM image of ZnO nanowire is shown in Fig. 2b. It can be seen that the top surface is uniform and orderly, indicating the nanowire is almost perpendicular to the substrate. Cross-sectional SEM image of the photoanode is shown in Fig. 2c. The length of ZnO nanowire is about 8 μm. There is no visible dividing line between the nanowires and the substrate in this work. The nanowires and the substrate are perfectly matched as a unity. The area marked with red dotted lines in Fig. 2c clearly reveals such a state of “no interface” between the nanowires and the substrate. However, in the FTO-based photoanode reported before, numerous grain boundary and cracks around the interface between ZnO nanowires and the FTO substrate can be found10111317. We believe the superior quality of the interface and the ZnO nanowires on GZOSC substrate is attributed to the lattice match between the nanowire and the substrate.


ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

(a) XRD spectrum of the ZnO nanowire array/GZOSC photoanode. (b) Top view SEM image of the photoanode. (c) Cross-sectional SEM images of the photoanode. (d) Low-resolution TEM image of two individual ZnO nanowire in the photoanode and the upper left inset gives its corresponding SAED pattern. (e) HRTEM image taken from the area marked with the red frame in (d).
© Copyright Policy - open-access
Related In: Results  -  Collection

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f2: (a) XRD spectrum of the ZnO nanowire array/GZOSC photoanode. (b) Top view SEM image of the photoanode. (c) Cross-sectional SEM images of the photoanode. (d) Low-resolution TEM image of two individual ZnO nanowire in the photoanode and the upper left inset gives its corresponding SAED pattern. (e) HRTEM image taken from the area marked with the red frame in (d).
Mentions: Figure 2a shows the XRD pattern of the ZnO nanowire/GZOSC photoanode. Two sharp narrow peaks at 34.4° and 72.4° in Fig. 2a can be indexed to a single crystalline wurtzite structure of ZnO. The dominated (002) peaks indicate an upstanding ZnO nanowire arrays along the c-axis. The XRD patterns of bare GZOSC and ZnO nanowire/GZOSC shown in the Figure S1 indicate that GZOSC has almost the same lattice parameter as pure ZnO. Top view SEM image of ZnO nanowire is shown in Fig. 2b. It can be seen that the top surface is uniform and orderly, indicating the nanowire is almost perpendicular to the substrate. Cross-sectional SEM image of the photoanode is shown in Fig. 2c. The length of ZnO nanowire is about 8 μm. There is no visible dividing line between the nanowires and the substrate in this work. The nanowires and the substrate are perfectly matched as a unity. The area marked with red dotted lines in Fig. 2c clearly reveals such a state of “no interface” between the nanowires and the substrate. However, in the FTO-based photoanode reported before, numerous grain boundary and cracks around the interface between ZnO nanowires and the FTO substrate can be found10111317. We believe the superior quality of the interface and the ZnO nanowires on GZOSC substrate is attributed to the lattice match between the nanowire and the substrate.

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.