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ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.


The schematic diagram of the GZOSC-based DSSCs (Left) and the injected electrons transport smoothly in homogeneous interface (Right).
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f1: The schematic diagram of the GZOSC-based DSSCs (Left) and the injected electrons transport smoothly in homogeneous interface (Right).

Mentions: Apparently, homoepitaxial growth is the best option to solve the above problems. Single crystal Ga-doped Zn (GZOSC) has the same crystal parameter as pure ZnO, but it has much higher conductivity, thus it is an ideal substrate for growing the ZnO nanowires used in DSSCs20212223. It is expected that high-quality homogeneous interface between the GZOSC and the nanowires could be obtained, and consequently avoiding the scattering and recombination of electrons at the interface, as shown in the right of Fig. 1. The instability of the device caused from the instability of polycrystalline ZnO can also be improved. As far as we are concerned, the oriented ZnO nanowires arrays grown on GZOSC has never been employed in the field of DSSCs.


ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Hu Q, Li Y, Huang F, Zhang Z, Ding K, Wei M, Lin Z - Sci Rep (2015)

The schematic diagram of the GZOSC-based DSSCs (Left) and the injected electrons transport smoothly in homogeneous interface (Right).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4477229&req=5

f1: The schematic diagram of the GZOSC-based DSSCs (Left) and the injected electrons transport smoothly in homogeneous interface (Right).
Mentions: Apparently, homoepitaxial growth is the best option to solve the above problems. Single crystal Ga-doped Zn (GZOSC) has the same crystal parameter as pure ZnO, but it has much higher conductivity, thus it is an ideal substrate for growing the ZnO nanowires used in DSSCs20212223. It is expected that high-quality homogeneous interface between the GZOSC and the nanowires could be obtained, and consequently avoiding the scattering and recombination of electrons at the interface, as shown in the right of Fig. 1. The instability of the device caused from the instability of polycrystalline ZnO can also be improved. As far as we are concerned, the oriented ZnO nanowires arrays grown on GZOSC has never been employed in the field of DSSCs.

Bottom Line: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability.The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition.This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.

ABSTRACT
High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

No MeSH data available.