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High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

Yeom DY, Jeon W, Tu ND, Yeo SY, Lee SS, Sung BJ, Chang H, Lim JA, Kim H - Sci Rep (2015)

Bottom Line: We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature.In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives.We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

View Article: PubMed Central - PubMed

Affiliation: 1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] Department of Chemistry, Sogang University, Seoul 121-742, Korea.

ABSTRACT
For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

No MeSH data available.


Schematic illustration of the preparation of BT-rGO.
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f1: Schematic illustration of the preparation of BT-rGO.

Mentions: Graphene oxide (GO) obtained by the oxidation and exfoliation of graphite is the most promising candidate as a starting material for bulk synthesis of doped graphene nanoplatelets. Fig. 1 illustrates the preparation of B-doped graphene nanoplatelets (BT-rGO) by simple thermal annealing of a GO/B2O3 mixture. The BT-rGO was prepared in two steps: the formation of boron oxide aqueous solution well mixed with GO by ultrasonication and the thermal annealing of the GO/B2O3 mixture after freeze-drying for simultaneous reduction and doping. We found that the GO/B2O3 aqueous solution was very clear with a dark-brown color, which means that the solution was very homogeneous. This homogeneity leads to the obtained ultra-uniform doping of boron into the network of the graphene nanoplatelet. Thermally reduced graphene oxide without boron oxide (T-rGO) was also prepared as a control.


High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

Yeom DY, Jeon W, Tu ND, Yeo SY, Lee SS, Sung BJ, Chang H, Lim JA, Kim H - Sci Rep (2015)

Schematic illustration of the preparation of BT-rGO.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4419459&req=5

f1: Schematic illustration of the preparation of BT-rGO.
Mentions: Graphene oxide (GO) obtained by the oxidation and exfoliation of graphite is the most promising candidate as a starting material for bulk synthesis of doped graphene nanoplatelets. Fig. 1 illustrates the preparation of B-doped graphene nanoplatelets (BT-rGO) by simple thermal annealing of a GO/B2O3 mixture. The BT-rGO was prepared in two steps: the formation of boron oxide aqueous solution well mixed with GO by ultrasonication and the thermal annealing of the GO/B2O3 mixture after freeze-drying for simultaneous reduction and doping. We found that the GO/B2O3 aqueous solution was very clear with a dark-brown color, which means that the solution was very homogeneous. This homogeneity leads to the obtained ultra-uniform doping of boron into the network of the graphene nanoplatelet. Thermally reduced graphene oxide without boron oxide (T-rGO) was also prepared as a control.

Bottom Line: We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature.In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives.We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

View Article: PubMed Central - PubMed

Affiliation: 1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] Department of Chemistry, Sogang University, Seoul 121-742, Korea.

ABSTRACT
For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

No MeSH data available.