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Reconfigurable Boolean logic using magnetic single-electron transistors.

Gonzalez-Zalba MF, Ciccarelli C, Zarbo LP, Irvine AC, Campion RC, Gallagher BL, Jungwirth T, Ferguson AJ, Wunderlich J - PLoS ONE (2015)

Bottom Line: We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation.Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level.Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.

View Article: PubMed Central - PubMed

Affiliation: Hitachi Cambridge Laboratory, Cambridge CB3 0HE, United Kingdom.

ABSTRACT
We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer, which induces a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.

No MeSH data available.


Device structure.(a) Schematic cross-section of the device sketching the magnetization orientation of the (Ga,Mn)As back-gate layer. (b) SEM image of the device. The aluminium island is separated from the source and drain leads by AlOx tunnel junctions. Side gates were not used in this experiment. (c) Drain current (Ids) oscillations as a function of the back gate voltage (Vgs).
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pone.0125142.g001: Device structure.(a) Schematic cross-section of the device sketching the magnetization orientation of the (Ga,Mn)As back-gate layer. (b) SEM image of the device. The aluminium island is separated from the source and drain leads by AlOx tunnel junctions. Side gates were not used in this experiment. (c) Drain current (Ids) oscillations as a function of the back gate voltage (Vgs).

Mentions: A schematic cross-section of the proposed aluminium MSET is depicted in Fig 1(a). The key element of this structure is the magnetic gate electrode, an epitaxially grown Ga0.94 Mn0.06 As layer on GaAs that acts as a back-gate with easy-axis directions [110] and [1–10]. A magnetic field B = 0.7 T, larger that the saturation field Bs ≈0.3 T, is applied to rotate the magnetization M with respect to the [001] direction (ϕ = 0°). The angle θ with respect to the [1–10] direction is kept equal to 90° in all measurements. The results presented here are independent of the magnitude of B for B > Bs. A 100 nm alumina layer is used as gate dielectric on top of which the Al-SET is fabricated. The source and drain leads are separated from the micron-sized island by aluminium oxide tunnel junctions, as it can be observed in the SEM image in Fig 1(b). In this letter the side gates were not used but could provide extra-functionality to the structure.


Reconfigurable Boolean logic using magnetic single-electron transistors.

Gonzalez-Zalba MF, Ciccarelli C, Zarbo LP, Irvine AC, Campion RC, Gallagher BL, Jungwirth T, Ferguson AJ, Wunderlich J - PLoS ONE (2015)

Device structure.(a) Schematic cross-section of the device sketching the magnetization orientation of the (Ga,Mn)As back-gate layer. (b) SEM image of the device. The aluminium island is separated from the source and drain leads by AlOx tunnel junctions. Side gates were not used in this experiment. (c) Drain current (Ids) oscillations as a function of the back gate voltage (Vgs).
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4414357&req=5

pone.0125142.g001: Device structure.(a) Schematic cross-section of the device sketching the magnetization orientation of the (Ga,Mn)As back-gate layer. (b) SEM image of the device. The aluminium island is separated from the source and drain leads by AlOx tunnel junctions. Side gates were not used in this experiment. (c) Drain current (Ids) oscillations as a function of the back gate voltage (Vgs).
Mentions: A schematic cross-section of the proposed aluminium MSET is depicted in Fig 1(a). The key element of this structure is the magnetic gate electrode, an epitaxially grown Ga0.94 Mn0.06 As layer on GaAs that acts as a back-gate with easy-axis directions [110] and [1–10]. A magnetic field B = 0.7 T, larger that the saturation field Bs ≈0.3 T, is applied to rotate the magnetization M with respect to the [001] direction (ϕ = 0°). The angle θ with respect to the [1–10] direction is kept equal to 90° in all measurements. The results presented here are independent of the magnitude of B for B > Bs. A 100 nm alumina layer is used as gate dielectric on top of which the Al-SET is fabricated. The source and drain leads are separated from the micron-sized island by aluminium oxide tunnel junctions, as it can be observed in the SEM image in Fig 1(b). In this letter the side gates were not used but could provide extra-functionality to the structure.

Bottom Line: We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation.Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level.Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.

View Article: PubMed Central - PubMed

Affiliation: Hitachi Cambridge Laboratory, Cambridge CB3 0HE, United Kingdom.

ABSTRACT
We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer, which induces a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.

No MeSH data available.