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Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

Wang Z, Al-Jawhari HA, Nayak PK, Caraveo-Frescas JA, Wei N, Hedhili MN, Alshareef HN - Sci Rep (2015)

Bottom Line: The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase.The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide.Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

View Article: PubMed Central - PubMed

Affiliation: Materials Science and Engineering, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

ABSTRACT
In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

No MeSH data available.


Related in: MedlinePlus

Flow diagram for TFTs and CMOS inverters fabrication.The detailed structures of TFTs and CMOS inverters are shown in (d) and (e).
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f1: Flow diagram for TFTs and CMOS inverters fabrication.The detailed structures of TFTs and CMOS inverters are shown in (d) and (e).

Mentions: Fabrication process flow for both n- and p-type TFTs and tin oxide TFTs based CMOS inverter is shown in Figure 1. The capacitance and current-voltage curve for the ATO dielectric is presented in Figure S2, the average capacitance is found about 55 nFcm−2. For the p-type TFT, single SnO layer was used as active layer, while Cu2O/SnO bilayer was used for the n-type TFT, as depicted in Figure 1(d) and (e). The output and transfer characteristic curves of both TFTs are presented in Figure 2(a)–(d). The output characteristics of the single layer SnO TFT is shown in Figure 2(a), which exhibits p-type conductivity since the source to drain current (IDS) generated under a negative gate voltage (VGS). The output characteristics of TFT with Cu2O/SnO bilayer channel is presented in Figure 2(b). In contrast to the single layer SnO TFT, the TFT with Cu2O/SnO bilayer shows an n-type conductivity, since the IDS generated under a positive VGS. In both cases, distinct linear and saturation regions can be identified. Current crowding was not observed in the linear region of either output characteristics, indicating Ohmic contact between titanium/gold electrodes and SnO or bilayer channel.


Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

Wang Z, Al-Jawhari HA, Nayak PK, Caraveo-Frescas JA, Wei N, Hedhili MN, Alshareef HN - Sci Rep (2015)

Flow diagram for TFTs and CMOS inverters fabrication.The detailed structures of TFTs and CMOS inverters are shown in (d) and (e).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4402970&req=5

f1: Flow diagram for TFTs and CMOS inverters fabrication.The detailed structures of TFTs and CMOS inverters are shown in (d) and (e).
Mentions: Fabrication process flow for both n- and p-type TFTs and tin oxide TFTs based CMOS inverter is shown in Figure 1. The capacitance and current-voltage curve for the ATO dielectric is presented in Figure S2, the average capacitance is found about 55 nFcm−2. For the p-type TFT, single SnO layer was used as active layer, while Cu2O/SnO bilayer was used for the n-type TFT, as depicted in Figure 1(d) and (e). The output and transfer characteristic curves of both TFTs are presented in Figure 2(a)–(d). The output characteristics of the single layer SnO TFT is shown in Figure 2(a), which exhibits p-type conductivity since the source to drain current (IDS) generated under a negative gate voltage (VGS). The output characteristics of TFT with Cu2O/SnO bilayer channel is presented in Figure 2(b). In contrast to the single layer SnO TFT, the TFT with Cu2O/SnO bilayer shows an n-type conductivity, since the IDS generated under a positive VGS. In both cases, distinct linear and saturation regions can be identified. Current crowding was not observed in the linear region of either output characteristics, indicating Ohmic contact between titanium/gold electrodes and SnO or bilayer channel.

Bottom Line: The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase.The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide.Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

View Article: PubMed Central - PubMed

Affiliation: Materials Science and Engineering, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

ABSTRACT
In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

No MeSH data available.


Related in: MedlinePlus