Limits...
Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates.

Zhao L, Lu Z, Zhang F, Tian G, Song X, Li Z, Huang K, Zhang Z, Qin M - Sci Rep (2015)

Bottom Line: These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops.Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions.These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch(2)) nonvolatile memories and other oxide nanoelectronic devices.

View Article: PubMed Central - PubMed

Affiliation: Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China.

ABSTRACT
Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch(2)) nonvolatile memories and other oxide nanoelectronic devices.

No MeSH data available.


Fabrication details for the nanocapacitor arrays.(a) Schematic flow chart illustrating the fabrication procedure for the BFO-SRO nanocapcitor arrays on Nb-STO substrate; (b, c) three-dimensional topographic image for the AAO mask (b) and BFO/SRO nanodots (c); (d) XRD diffraction pattern for the as-deposited SRO/BFO/Nb-STO nanodot heterostructures.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4389717&req=5

f1: Fabrication details for the nanocapacitor arrays.(a) Schematic flow chart illustrating the fabrication procedure for the BFO-SRO nanocapcitor arrays on Nb-STO substrate; (b, c) three-dimensional topographic image for the AAO mask (b) and BFO/SRO nanodots (c); (d) XRD diffraction pattern for the as-deposited SRO/BFO/Nb-STO nanodot heterostructures.

Mentions: To construct the nanocapacitor array, we have deposited BFO/SRO heterostructured nanodots on conductive Nb-STO substrates which serve as bottom electrodes. In brief, the BFO/SRO herterostructured nanodots were sequentially grown on a conductive Nb-doped (100) SrTiO3 (Nb-STO) substrate through an AAO template by pulsed laser deposition (PLD). The fabrication process is illustrated in Fig. 1(a), the details of which will be presented in the method section, and further information can also be found in our previous reports1718. As shown Fig. 1(c), the BFO nanodots exhibit an average lateral size of ~60 nm, and a dot-dot distance of ~120 nm. The XRD spectrum shows a (001)-orientated BFO/SRO heterostructure on Nb-STO, as reflected by the (00l) diffraction peaks shown in Fig. 1(d).


Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates.

Zhao L, Lu Z, Zhang F, Tian G, Song X, Li Z, Huang K, Zhang Z, Qin M - Sci Rep (2015)

Fabrication details for the nanocapacitor arrays.(a) Schematic flow chart illustrating the fabrication procedure for the BFO-SRO nanocapcitor arrays on Nb-STO substrate; (b, c) three-dimensional topographic image for the AAO mask (b) and BFO/SRO nanodots (c); (d) XRD diffraction pattern for the as-deposited SRO/BFO/Nb-STO nanodot heterostructures.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4389717&req=5

f1: Fabrication details for the nanocapacitor arrays.(a) Schematic flow chart illustrating the fabrication procedure for the BFO-SRO nanocapcitor arrays on Nb-STO substrate; (b, c) three-dimensional topographic image for the AAO mask (b) and BFO/SRO nanodots (c); (d) XRD diffraction pattern for the as-deposited SRO/BFO/Nb-STO nanodot heterostructures.
Mentions: To construct the nanocapacitor array, we have deposited BFO/SRO heterostructured nanodots on conductive Nb-STO substrates which serve as bottom electrodes. In brief, the BFO/SRO herterostructured nanodots were sequentially grown on a conductive Nb-doped (100) SrTiO3 (Nb-STO) substrate through an AAO template by pulsed laser deposition (PLD). The fabrication process is illustrated in Fig. 1(a), the details of which will be presented in the method section, and further information can also be found in our previous reports1718. As shown Fig. 1(c), the BFO nanodots exhibit an average lateral size of ~60 nm, and a dot-dot distance of ~120 nm. The XRD spectrum shows a (001)-orientated BFO/SRO heterostructure on Nb-STO, as reflected by the (00l) diffraction peaks shown in Fig. 1(d).

Bottom Line: These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops.Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions.These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch(2)) nonvolatile memories and other oxide nanoelectronic devices.

View Article: PubMed Central - PubMed

Affiliation: Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China.

ABSTRACT
Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch(2)) nonvolatile memories and other oxide nanoelectronic devices.

No MeSH data available.