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Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM - Nanoscale Res Lett (2015)

Bottom Line: Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device.The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process.Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

ABSTRACT
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

No MeSH data available.


The schematic diagram of hydration-dehydration reaction mechanism on Sn:SiOxfilm[146].
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Fig35: The schematic diagram of hydration-dehydration reaction mechanism on Sn:SiOxfilm[146].

Mentions: In order to explain the current reduction of SCCO2 treatment mechanism clearly, we proposed a reaction mode to explain the characteristics of the SCCO2-treated Sn:SiOx film, as shown in FigureĀ 35. As the sample was put into the water-mixed SCCO2 fluid environment, the H2O molecule was carried into the grain boundary of Sn:SiOx film by SCCO2 fluid, which is attributed to the high penetration ability of SCCO2 fluid. Then, dehydration of neighbor hydroxyl groups was induced in supercritical fluids so as to form Si-O-Si and Sn-O-Si network-like bonding in the film, which is called as hydration-dehydration reaction of SCCO2 fluids in Sn:SiOx film.Figure 35


Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM - Nanoscale Res Lett (2015)

The schematic diagram of hydration-dehydration reaction mechanism on Sn:SiOxfilm[146].
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4388104&req=5

Fig35: The schematic diagram of hydration-dehydration reaction mechanism on Sn:SiOxfilm[146].
Mentions: In order to explain the current reduction of SCCO2 treatment mechanism clearly, we proposed a reaction mode to explain the characteristics of the SCCO2-treated Sn:SiOx film, as shown in FigureĀ 35. As the sample was put into the water-mixed SCCO2 fluid environment, the H2O molecule was carried into the grain boundary of Sn:SiOx film by SCCO2 fluid, which is attributed to the high penetration ability of SCCO2 fluid. Then, dehydration of neighbor hydroxyl groups was induced in supercritical fluids so as to form Si-O-Si and Sn-O-Si network-like bonding in the film, which is called as hydration-dehydration reaction of SCCO2 fluids in Sn:SiOx film.Figure 35

Bottom Line: Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device.The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process.Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

ABSTRACT
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

No MeSH data available.