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Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM - Nanoscale Res Lett (2015)

Bottom Line: Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device.The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process.Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

ABSTRACT
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

No MeSH data available.


Switching layer structure, 100-cycle current-voltage sweep, and corresponding endurance property test. a to d are the switching layer structures of the four kinds of devices. e to h are the 100-cycle current-voltage sweep without equipment current compliance. Insets of the figures are the corresponding HRS and LRS distribution with a reading voltage of 0.1 V. i to l are the endurance performance of each device.
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Fig21: Switching layer structure, 100-cycle current-voltage sweep, and corresponding endurance property test. a to d are the switching layer structures of the four kinds of devices. e to h are the 100-cycle current-voltage sweep without equipment current compliance. Insets of the figures are the corresponding HRS and LRS distribution with a reading voltage of 0.1 V. i to l are the endurance performance of each device.

Mentions: To verify the excellent electrical property of the two-sided GO RRAM device, four kinds of devices are fabricated and tested, which are shown in Figure 21. In Figure 21a,b,c, and d are the schematic device structures, Figure 21e to Figure 21l are their corresponding DC (without equipment current compliance) and AC endurance test results. From DC testing result, we can find that single Zr:SiO2 exhibits no current self-limiting property but GO:SiO2/Zr:SiO2, Zr:SiO2/GO:SiO2, and GO:SiO2/Zr:SiO2/GO:SiO2 structure devices own intrinsic current restriction ability. It can be also observed that the two-sided GO RRAM device shows uniform switching during 100-cycle switching, and the memory window also remains stable compared with one-sided GO RRAM device (insets of Figure 21e-h are the corresponding distribution of HRS and LRS read at 0.1 V). To the AC endurance test, the two-sided GO device can achieve up to more than 1012 cycles. It is the first time for silicon oxide-based RRAM to reach this endurance value, comparable to the previous result of TaO-based RRAM [132].Figure 21


Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM - Nanoscale Res Lett (2015)

Switching layer structure, 100-cycle current-voltage sweep, and corresponding endurance property test. a to d are the switching layer structures of the four kinds of devices. e to h are the 100-cycle current-voltage sweep without equipment current compliance. Insets of the figures are the corresponding HRS and LRS distribution with a reading voltage of 0.1 V. i to l are the endurance performance of each device.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4388104&req=5

Fig21: Switching layer structure, 100-cycle current-voltage sweep, and corresponding endurance property test. a to d are the switching layer structures of the four kinds of devices. e to h are the 100-cycle current-voltage sweep without equipment current compliance. Insets of the figures are the corresponding HRS and LRS distribution with a reading voltage of 0.1 V. i to l are the endurance performance of each device.
Mentions: To verify the excellent electrical property of the two-sided GO RRAM device, four kinds of devices are fabricated and tested, which are shown in Figure 21. In Figure 21a,b,c, and d are the schematic device structures, Figure 21e to Figure 21l are their corresponding DC (without equipment current compliance) and AC endurance test results. From DC testing result, we can find that single Zr:SiO2 exhibits no current self-limiting property but GO:SiO2/Zr:SiO2, Zr:SiO2/GO:SiO2, and GO:SiO2/Zr:SiO2/GO:SiO2 structure devices own intrinsic current restriction ability. It can be also observed that the two-sided GO RRAM device shows uniform switching during 100-cycle switching, and the memory window also remains stable compared with one-sided GO RRAM device (insets of Figure 21e-h are the corresponding distribution of HRS and LRS read at 0.1 V). To the AC endurance test, the two-sided GO device can achieve up to more than 1012 cycles. It is the first time for silicon oxide-based RRAM to reach this endurance value, comparable to the previous result of TaO-based RRAM [132].Figure 21

Bottom Line: Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device.The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process.Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

ABSTRACT
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

No MeSH data available.