Limits...
Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM - Nanoscale Res Lett (2015)

Bottom Line: Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device.The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process.Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

ABSTRACT
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

No MeSH data available.


Electrical characteristics of Pt/metal:SiO2/TiN memory device. The current conduction mechanism of HRS is dominated by Poole-Frenkel conduction.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4388104&req=5

Fig16: Electrical characteristics of Pt/metal:SiO2/TiN memory device. The current conduction mechanism of HRS is dominated by Poole-Frenkel conduction.

Mentions: The HRS and LRS of I-V curves were analyzed for the current conduction mechanisms in order to further discuss the resistance switching mechanisms in the metal-doped silicon oxide thin film (Zn:SiO2, Ni:SiO2, Sn:SiO2), which is shown in Figure 16. The I-V fitting results demonstrated that the current conduction in the HRS in the metal-doped thin film was dominated by the Poole-Frenkel emission mechanism. The Poole-Frenkel conduction is due to thermal emission of trapped electrons into conduction band. Based on the electrical analyses, it could be inferred that metal dopants in SiO2 may result in an increased amount of hetero-defects in the film. When the voltage was applied to the film, the electrons were emitted through the hetero-defects, from which we could verify the current conduction dominated by Poole-Frenkel mechanism. On the other hand, the HRS will transform into the LRS when the applied voltage was higher than the set voltage. In this case, results of the current fitting revealed that the current conduction was dominated by Ohmic’s conduction mechanism. We believe that the conductive filament would be formed due to the current flowing through metal-induced defects in the metal-doped silicon oxide film. The conductive filament makes the current conduction mechanism dominated by Ohmic conduction.Figure 16


Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM - Nanoscale Res Lett (2015)

Electrical characteristics of Pt/metal:SiO2/TiN memory device. The current conduction mechanism of HRS is dominated by Poole-Frenkel conduction.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4388104&req=5

Fig16: Electrical characteristics of Pt/metal:SiO2/TiN memory device. The current conduction mechanism of HRS is dominated by Poole-Frenkel conduction.
Mentions: The HRS and LRS of I-V curves were analyzed for the current conduction mechanisms in order to further discuss the resistance switching mechanisms in the metal-doped silicon oxide thin film (Zn:SiO2, Ni:SiO2, Sn:SiO2), which is shown in Figure 16. The I-V fitting results demonstrated that the current conduction in the HRS in the metal-doped thin film was dominated by the Poole-Frenkel emission mechanism. The Poole-Frenkel conduction is due to thermal emission of trapped electrons into conduction band. Based on the electrical analyses, it could be inferred that metal dopants in SiO2 may result in an increased amount of hetero-defects in the film. When the voltage was applied to the film, the electrons were emitted through the hetero-defects, from which we could verify the current conduction dominated by Poole-Frenkel mechanism. On the other hand, the HRS will transform into the LRS when the applied voltage was higher than the set voltage. In this case, results of the current fitting revealed that the current conduction was dominated by Ohmic’s conduction mechanism. We believe that the conductive filament would be formed due to the current flowing through metal-induced defects in the metal-doped silicon oxide film. The conductive filament makes the current conduction mechanism dominated by Ohmic conduction.Figure 16

Bottom Line: Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device.The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process.Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

ABSTRACT
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

No MeSH data available.