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Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM - Nanoscale Res Lett (2015)

Bottom Line: Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device.The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process.Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

ABSTRACT
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

No MeSH data available.


The Ln(k)-1/T curves with different line segments for Ni:SiO2RRAM device.
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Fig13: The Ln(k)-1/T curves with different line segments for Ni:SiO2RRAM device.

Mentions: Figure 12 shows the Ln(Q)-time curve at 30°C, from which we found that the curve can be divided into three line segments with unobvious variation on line slope. But when the temperature is increased to 60°C, the Ln(Q)-time curve reveals three line segments with different line slope. In order to further investigate the phenomena, the chemical reaction activation energy of different line segments in Ln(Q)-time curve was extracted at variable temperature according to the Arrhenius reaction equation, k = A exp(−Ea/RT), where k is reaction rate constant, A is reaction intrinsic factor, Ea is activation energy, and R is gas constant. After linear curve fitting and calculation for three line segments in Ln(k)-1/T curves as shown in Figure 13, we found that the activation energy of the first line segment, Ea1, is 1.04 eV (101 kJ/mole), the activation energy of the second line, Ea2, is 1.28 eV (124 kJ/mole), and the activation energy of the third segment, Ea3, is 0.7 eV (71 kJ/mole). According to the literature reports [123], Ea1 is close to O-O broken bond energy, Ea2 is close to O-N broken bond energy, and Ea3 is close to the migration activation energy of oxygen ion in silicon oxide solid state material.Figure 12


Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM - Nanoscale Res Lett (2015)

The Ln(k)-1/T curves with different line segments for Ni:SiO2RRAM device.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4388104&req=5

Fig13: The Ln(k)-1/T curves with different line segments for Ni:SiO2RRAM device.
Mentions: Figure 12 shows the Ln(Q)-time curve at 30°C, from which we found that the curve can be divided into three line segments with unobvious variation on line slope. But when the temperature is increased to 60°C, the Ln(Q)-time curve reveals three line segments with different line slope. In order to further investigate the phenomena, the chemical reaction activation energy of different line segments in Ln(Q)-time curve was extracted at variable temperature according to the Arrhenius reaction equation, k = A exp(−Ea/RT), where k is reaction rate constant, A is reaction intrinsic factor, Ea is activation energy, and R is gas constant. After linear curve fitting and calculation for three line segments in Ln(k)-1/T curves as shown in Figure 13, we found that the activation energy of the first line segment, Ea1, is 1.04 eV (101 kJ/mole), the activation energy of the second line, Ea2, is 1.28 eV (124 kJ/mole), and the activation energy of the third segment, Ea3, is 0.7 eV (71 kJ/mole). According to the literature reports [123], Ea1 is close to O-O broken bond energy, Ea2 is close to O-N broken bond energy, and Ea3 is close to the migration activation energy of oxygen ion in silicon oxide solid state material.Figure 12

Bottom Line: Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device.The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process.Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

ABSTRACT
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

No MeSH data available.