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Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM - Nanoscale Res Lett (2015)

Bottom Line: Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device.The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process.Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

ABSTRACT
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

No MeSH data available.


The Ln(Q)-time and Ln(A)-time curves for first-order rate law analysis in RRAM device.
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Fig10: The Ln(Q)-time and Ln(A)-time curves for first-order rate law analysis in RRAM device.

Mentions: To inspect the properties involved in the reset process, the proportional reaction rate and the reactant concentration of the first-order rate law in electrochemical reaction were used and discussed. The first-order rate law can be expressed as, in which [A], t, and k represent the reaction production concentration, reaction time and reaction rate constant. In addition, there also exists a relationship between the reaction production concentration [A] and the charge quantity Q, which can be expressed as [Q/(q*n)]/V = mole/V = [A]. In this equation, Q/(q*n) is defined as the mole of the reaction production as a whole, in which n is the number of the reaction and q is the charge carried by one-mole electrons. Besides, V is the volume of the resistive film, which can be viewed as a constant. From this equation, we find that the reaction production concentration [A] is proportional to the charge quantity Q. By substituting this equation into the first-order rate law equation, we can obtain that the reaction rate constant k directly correlates with the slope of In(Q)-time curve. Thus by drawing out the Ln(Q)-time curve, we can evaluate the variation of constant k as shown in Figure 10.Figure 10


Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM - Nanoscale Res Lett (2015)

The Ln(Q)-time and Ln(A)-time curves for first-order rate law analysis in RRAM device.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4388104&req=5

Fig10: The Ln(Q)-time and Ln(A)-time curves for first-order rate law analysis in RRAM device.
Mentions: To inspect the properties involved in the reset process, the proportional reaction rate and the reactant concentration of the first-order rate law in electrochemical reaction were used and discussed. The first-order rate law can be expressed as, in which [A], t, and k represent the reaction production concentration, reaction time and reaction rate constant. In addition, there also exists a relationship between the reaction production concentration [A] and the charge quantity Q, which can be expressed as [Q/(q*n)]/V = mole/V = [A]. In this equation, Q/(q*n) is defined as the mole of the reaction production as a whole, in which n is the number of the reaction and q is the charge carried by one-mole electrons. Besides, V is the volume of the resistive film, which can be viewed as a constant. From this equation, we find that the reaction production concentration [A] is proportional to the charge quantity Q. By substituting this equation into the first-order rate law equation, we can obtain that the reaction rate constant k directly correlates with the slope of In(Q)-time curve. Thus by drawing out the Ln(Q)-time curve, we can evaluate the variation of constant k as shown in Figure 10.Figure 10

Bottom Line: Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device.The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process.Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.

ABSTRACT
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

No MeSH data available.