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Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.

Wang LG, Qian X, Cao YQ, Cao ZY, Fang GY, Li AD, Wu D - Nanoscale Res Lett (2015)

Bottom Line: The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years.The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed.The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

View Article: PubMed Central - PubMed

Affiliation: National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing, 210093 People's Republic of China ; Anhui Key Laboratory of Functional Coordination Compounds, School of Chemistry and Chemical Engineering, Anqing Normal University, 128 Linghu South Road, Anhui, 246011 People's Republic of China.

ABSTRACT
We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

No MeSH data available.


Resistive switching characteristics of the device unit and distribution of the set and reset voltages. (a) Typical resistive switching characteristics of the device unit of Pt/Al2O3/HfO2/Al2O3/TiN/Si after initial, second, and third cycles. (b, c) Statistical results of distribution and cumulative probability of the set and reset voltages measured from a device unit for 400 times tests. (d) Resistive switching data of 50 randomly selected device units.
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Fig3: Resistive switching characteristics of the device unit and distribution of the set and reset voltages. (a) Typical resistive switching characteristics of the device unit of Pt/Al2O3/HfO2/Al2O3/TiN/Si after initial, second, and third cycles. (b, c) Statistical results of distribution and cumulative probability of the set and reset voltages measured from a device unit for 400 times tests. (d) Resistive switching data of 50 randomly selected device units.

Mentions: The I-V curves of the device unit of Pt/Al2O3/HfO2/Al2O3/TiN/Si with various cycles are plotted in Figure 3a, indicating a typical bipolar resistive switching characteristic. For almost all the samples, larger forming voltage is needed to form conductive channels before the switching test. The forming voltage of device unit is about −2 V. The initial resistance state of the memory unit in the first cycle (black curve) is higher than that of the second and third cycles (blue and red curves). Moreover, as-prepared original device unit is in the LRS and an excess positive voltage of 2 V is needed to reset the device unit from LRS to HRS (denoted by arrows 1 and 2 in Figure 3a). The I-V curves from the second and third cycles are almost in superposition with similar set and reset voltages.Figure 3


Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.

Wang LG, Qian X, Cao YQ, Cao ZY, Fang GY, Li AD, Wu D - Nanoscale Res Lett (2015)

Resistive switching characteristics of the device unit and distribution of the set and reset voltages. (a) Typical resistive switching characteristics of the device unit of Pt/Al2O3/HfO2/Al2O3/TiN/Si after initial, second, and third cycles. (b, c) Statistical results of distribution and cumulative probability of the set and reset voltages measured from a device unit for 400 times tests. (d) Resistive switching data of 50 randomly selected device units.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385330&req=5

Fig3: Resistive switching characteristics of the device unit and distribution of the set and reset voltages. (a) Typical resistive switching characteristics of the device unit of Pt/Al2O3/HfO2/Al2O3/TiN/Si after initial, second, and third cycles. (b, c) Statistical results of distribution and cumulative probability of the set and reset voltages measured from a device unit for 400 times tests. (d) Resistive switching data of 50 randomly selected device units.
Mentions: The I-V curves of the device unit of Pt/Al2O3/HfO2/Al2O3/TiN/Si with various cycles are plotted in Figure 3a, indicating a typical bipolar resistive switching characteristic. For almost all the samples, larger forming voltage is needed to form conductive channels before the switching test. The forming voltage of device unit is about −2 V. The initial resistance state of the memory unit in the first cycle (black curve) is higher than that of the second and third cycles (blue and red curves). Moreover, as-prepared original device unit is in the LRS and an excess positive voltage of 2 V is needed to reset the device unit from LRS to HRS (denoted by arrows 1 and 2 in Figure 3a). The I-V curves from the second and third cycles are almost in superposition with similar set and reset voltages.Figure 3

Bottom Line: The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years.The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed.The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

View Article: PubMed Central - PubMed

Affiliation: National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing, 210093 People's Republic of China ; Anhui Key Laboratory of Functional Coordination Compounds, School of Chemistry and Chemical Engineering, Anqing Normal University, 128 Linghu South Road, Anhui, 246011 People's Republic of China.

ABSTRACT
We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

No MeSH data available.