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Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

Jia E, Zhou C, Wang W - Nanoscale Res Lett (2015)

Bottom Line: Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated.The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects.Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

View Article: PubMed Central - PubMed

Affiliation: Institute Of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic System, Chinese Academy of Sciences, No.6 Bertiao, Zhongguancun, Beijing, 100190 China.

ABSTRACT
Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

No MeSH data available.


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Growth rate varies at different substrate temperatures (deposition temperature) on the condition that plasma power is 80 W.
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Fig2: Growth rate varies at different substrate temperatures (deposition temperature) on the condition that plasma power is 80 W.

Mentions: GPC decayed when deposition temperature increased, from 0.165 to 0.123 nm/cycle as shown in Figure 2, which could be explained by ‘ALD process window’. The growth rate decayed with deposition temperature increase was due to the reduction in adsorption site density on the depositing surface for adsorption desorption. Deposition temperature increasing caused adsorption molecules to have enough kinetic energy over adsorption energy to escape from surface, which decayed the Al2O3 films thickness.Figure 2


Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

Jia E, Zhou C, Wang W - Nanoscale Res Lett (2015)

Growth rate varies at different substrate temperatures (deposition temperature) on the condition that plasma power is 80 W.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385297&req=5

Fig2: Growth rate varies at different substrate temperatures (deposition temperature) on the condition that plasma power is 80 W.
Mentions: GPC decayed when deposition temperature increased, from 0.165 to 0.123 nm/cycle as shown in Figure 2, which could be explained by ‘ALD process window’. The growth rate decayed with deposition temperature increase was due to the reduction in adsorption site density on the depositing surface for adsorption desorption. Deposition temperature increasing caused adsorption molecules to have enough kinetic energy over adsorption energy to escape from surface, which decayed the Al2O3 films thickness.Figure 2

Bottom Line: Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated.The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects.Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

View Article: PubMed Central - PubMed

Affiliation: Institute Of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic System, Chinese Academy of Sciences, No.6 Bertiao, Zhongguancun, Beijing, 100190 China.

ABSTRACT
Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

No MeSH data available.


Related in: MedlinePlus