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A flexible transparent gas barrier film employing the method of mixing ALD/MLD-grown Al2O3 and alucone layers.

Xiao W, Hui DY, Zheng C, Yu D, Qiang YY, Ping C, Xiang CL, Yi Z - Nanoscale Res Lett (2015)

Bottom Line: Furthermore, a bending test upon single Al2O3 layers showed an increased WVTR of 1.59 × 10(-3) g/m(2)/day.However, the film with a 4 nm alucone organic layer inserted into the center displayed improved surface roughness, barrier performance, and transmittance.After the bending test, the hybrid film with 4 nm equally distributed alucone maintained better surface roughness (0.339 ± 0.014 nm) and barrier properties (9.94 × 10(-5) g/m(2)/day).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Jilin, 130012 China.

ABSTRACT
Atomic layer deposition (ALD) has been widely reported as a novel method for thin film encapsulation (TFE) of organic light-emitting diodes and organic photovoltaic cells. Both organic and inorganic thin films can be deposited by ALD with a variety of precursors. In this work, the performances of Al2O3 thin films and Al2O3/alucone hybrid films have been investigated. The samples with a 50 nm Al2O3 inorganic layer deposited by ALD at a low temperature of 80°C showed higher surface roughness (0.503 ± 0.011 nm), higher water vapor transmission rate (WVTR) values (3.77 × 10(-4) g/m(2)/day), and lower transmittance values (61%) when compared with the Al2O3 (inorganic)/alucone (organic) hybrid structure under same conditions. Furthermore, a bending test upon single Al2O3 layers showed an increased WVTR of 1.59 × 10(-3) g/m(2)/day. However, the film with a 4 nm alucone organic layer inserted into the center displayed improved surface roughness, barrier performance, and transmittance. After the bending test, the hybrid film with 4 nm equally distributed alucone maintained better surface roughness (0.339 ± 0.014 nm) and barrier properties (9.94 × 10(-5) g/m(2)/day). This interesting phenomenon reveals that multilayer thin films consisting of inorganic layers and decentralized alucone organic components have the potential to be useful in TFE applications on flexible optical electronics.

No MeSH data available.


Related in: MedlinePlus

The photo and schematic diagram of the bending device. (a) The initial state. (b) The final state. (c) The schematic diagram of the bending test.
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Fig2: The photo and schematic diagram of the bending device. (a) The initial state. (b) The final state. (c) The schematic diagram of the bending test.

Mentions: Table 2 summarizes some surface characteristics after thin film deposition by ALD at 80°C, including film thickness, normalized growth rate, RMS, and water contact angle. Previous research by Dameron et al. reported that the alucone organic films showed a growth rate of 4 Å/cycle at 85°C, much faster than approximately 1 Å/cycle for Al2O3 at 80°C [23]. Here, a similar MLD deposition rate was achieved at 3.8 Å/cycle at 80°C, which further indicates that MLD alucone is typically a bifunctional monomer for fast stepwise condensation polymerization and yield completely organic films. Figure 2a,b shows the setup of the device for the investigation of the mechanism behavior of TFE under oscillatory bending. A square film sample was loaded between parallel plates. One of the plates was mounted on an oscillatory driven stepper motor. The number of revolutions performed by the motor controls the frequency. In the middle of the bend, the lowest radius of curvature r and the largest tensile strain at the y-axis (Figure 2c) were determined by the distance between parallel plates. In this study, the distance was fixed at approximately 2 mm and the radius of curvature r was 1.05 mm. The white circle in Figure 2b marks the maximum curved position where the AFM images were taken.Table 2


A flexible transparent gas barrier film employing the method of mixing ALD/MLD-grown Al2O3 and alucone layers.

Xiao W, Hui DY, Zheng C, Yu D, Qiang YY, Ping C, Xiang CL, Yi Z - Nanoscale Res Lett (2015)

The photo and schematic diagram of the bending device. (a) The initial state. (b) The final state. (c) The schematic diagram of the bending test.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385290&req=5

Fig2: The photo and schematic diagram of the bending device. (a) The initial state. (b) The final state. (c) The schematic diagram of the bending test.
Mentions: Table 2 summarizes some surface characteristics after thin film deposition by ALD at 80°C, including film thickness, normalized growth rate, RMS, and water contact angle. Previous research by Dameron et al. reported that the alucone organic films showed a growth rate of 4 Å/cycle at 85°C, much faster than approximately 1 Å/cycle for Al2O3 at 80°C [23]. Here, a similar MLD deposition rate was achieved at 3.8 Å/cycle at 80°C, which further indicates that MLD alucone is typically a bifunctional monomer for fast stepwise condensation polymerization and yield completely organic films. Figure 2a,b shows the setup of the device for the investigation of the mechanism behavior of TFE under oscillatory bending. A square film sample was loaded between parallel plates. One of the plates was mounted on an oscillatory driven stepper motor. The number of revolutions performed by the motor controls the frequency. In the middle of the bend, the lowest radius of curvature r and the largest tensile strain at the y-axis (Figure 2c) were determined by the distance between parallel plates. In this study, the distance was fixed at approximately 2 mm and the radius of curvature r was 1.05 mm. The white circle in Figure 2b marks the maximum curved position where the AFM images were taken.Table 2

Bottom Line: Furthermore, a bending test upon single Al2O3 layers showed an increased WVTR of 1.59 × 10(-3) g/m(2)/day.However, the film with a 4 nm alucone organic layer inserted into the center displayed improved surface roughness, barrier performance, and transmittance.After the bending test, the hybrid film with 4 nm equally distributed alucone maintained better surface roughness (0.339 ± 0.014 nm) and barrier properties (9.94 × 10(-5) g/m(2)/day).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Jilin, 130012 China.

ABSTRACT
Atomic layer deposition (ALD) has been widely reported as a novel method for thin film encapsulation (TFE) of organic light-emitting diodes and organic photovoltaic cells. Both organic and inorganic thin films can be deposited by ALD with a variety of precursors. In this work, the performances of Al2O3 thin films and Al2O3/alucone hybrid films have been investigated. The samples with a 50 nm Al2O3 inorganic layer deposited by ALD at a low temperature of 80°C showed higher surface roughness (0.503 ± 0.011 nm), higher water vapor transmission rate (WVTR) values (3.77 × 10(-4) g/m(2)/day), and lower transmittance values (61%) when compared with the Al2O3 (inorganic)/alucone (organic) hybrid structure under same conditions. Furthermore, a bending test upon single Al2O3 layers showed an increased WVTR of 1.59 × 10(-3) g/m(2)/day. However, the film with a 4 nm alucone organic layer inserted into the center displayed improved surface roughness, barrier performance, and transmittance. After the bending test, the hybrid film with 4 nm equally distributed alucone maintained better surface roughness (0.339 ± 0.014 nm) and barrier properties (9.94 × 10(-5) g/m(2)/day). This interesting phenomenon reveals that multilayer thin films consisting of inorganic layers and decentralized alucone organic components have the potential to be useful in TFE applications on flexible optical electronics.

No MeSH data available.


Related in: MedlinePlus