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A flexible transparent gas barrier film employing the method of mixing ALD/MLD-grown Al2O3 and alucone layers.

Xiao W, Hui DY, Zheng C, Yu D, Qiang YY, Ping C, Xiang CL, Yi Z - Nanoscale Res Lett (2015)

Bottom Line: Furthermore, a bending test upon single Al2O3 layers showed an increased WVTR of 1.59 × 10(-3) g/m(2)/day.However, the film with a 4 nm alucone organic layer inserted into the center displayed improved surface roughness, barrier performance, and transmittance.After the bending test, the hybrid film with 4 nm equally distributed alucone maintained better surface roughness (0.339 ± 0.014 nm) and barrier properties (9.94 × 10(-5) g/m(2)/day).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Jilin, 130012 China.

ABSTRACT
Atomic layer deposition (ALD) has been widely reported as a novel method for thin film encapsulation (TFE) of organic light-emitting diodes and organic photovoltaic cells. Both organic and inorganic thin films can be deposited by ALD with a variety of precursors. In this work, the performances of Al2O3 thin films and Al2O3/alucone hybrid films have been investigated. The samples with a 50 nm Al2O3 inorganic layer deposited by ALD at a low temperature of 80°C showed higher surface roughness (0.503 ± 0.011 nm), higher water vapor transmission rate (WVTR) values (3.77 × 10(-4) g/m(2)/day), and lower transmittance values (61%) when compared with the Al2O3 (inorganic)/alucone (organic) hybrid structure under same conditions. Furthermore, a bending test upon single Al2O3 layers showed an increased WVTR of 1.59 × 10(-3) g/m(2)/day. However, the film with a 4 nm alucone organic layer inserted into the center displayed improved surface roughness, barrier performance, and transmittance. After the bending test, the hybrid film with 4 nm equally distributed alucone maintained better surface roughness (0.339 ± 0.014 nm) and barrier properties (9.94 × 10(-5) g/m(2)/day). This interesting phenomenon reveals that multilayer thin films consisting of inorganic layers and decentralized alucone organic components have the potential to be useful in TFE applications on flexible optical electronics.

No MeSH data available.


Related in: MedlinePlus

A schematic diagram of prepared TFE structures. (a) Film A: Al2O3 50 nm. (b) Film B: Al2O3/alucone/Al2O3: 23/4/23 nm. (c) Film C: Al2O3/alucone/Al2O3/alucone/Al2O3/alucone/Al2O3/alucone/Al2O3 9/1/9/1/9/1/9/1/9 nm.
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Fig1: A schematic diagram of prepared TFE structures. (a) Film A: Al2O3 50 nm. (b) Film B: Al2O3/alucone/Al2O3: 23/4/23 nm. (c) Film C: Al2O3/alucone/Al2O3/alucone/Al2O3/alucone/Al2O3/alucone/Al2O3 9/1/9/1/9/1/9/1/9 nm.

Mentions: In the experiments, we fabricated a group TFE consisting of three different thin films. All films have nominal thicknesses of approximately 50 nm. As shown in Figure 1, film A was a 50 nm Al2O3 inorganic film. Films B and C consisted of approximately 46 nm Al2O3 and 4 nm alucone. For film B, 4 nm alucone was in the center of the hybrid film (23/4/23 nm). However, the alucone layer was divided into four equal parts in film C (9/1/9/1/9/1/9/1/9 nm). Both Al2O3 and alucone thin films were deposited by a LabNano 9100 ALD system (Ensure Nanotech Inc., Beijing, China) at 80°C, and all pipes were heated to 120°C, while the pressure in the reaction chamber was 1.5 × 100 Pa.Figure 1


A flexible transparent gas barrier film employing the method of mixing ALD/MLD-grown Al2O3 and alucone layers.

Xiao W, Hui DY, Zheng C, Yu D, Qiang YY, Ping C, Xiang CL, Yi Z - Nanoscale Res Lett (2015)

A schematic diagram of prepared TFE structures. (a) Film A: Al2O3 50 nm. (b) Film B: Al2O3/alucone/Al2O3: 23/4/23 nm. (c) Film C: Al2O3/alucone/Al2O3/alucone/Al2O3/alucone/Al2O3/alucone/Al2O3 9/1/9/1/9/1/9/1/9 nm.
© Copyright Policy - open-access
Related In: Results  -  Collection

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Fig1: A schematic diagram of prepared TFE structures. (a) Film A: Al2O3 50 nm. (b) Film B: Al2O3/alucone/Al2O3: 23/4/23 nm. (c) Film C: Al2O3/alucone/Al2O3/alucone/Al2O3/alucone/Al2O3/alucone/Al2O3 9/1/9/1/9/1/9/1/9 nm.
Mentions: In the experiments, we fabricated a group TFE consisting of three different thin films. All films have nominal thicknesses of approximately 50 nm. As shown in Figure 1, film A was a 50 nm Al2O3 inorganic film. Films B and C consisted of approximately 46 nm Al2O3 and 4 nm alucone. For film B, 4 nm alucone was in the center of the hybrid film (23/4/23 nm). However, the alucone layer was divided into four equal parts in film C (9/1/9/1/9/1/9/1/9 nm). Both Al2O3 and alucone thin films were deposited by a LabNano 9100 ALD system (Ensure Nanotech Inc., Beijing, China) at 80°C, and all pipes were heated to 120°C, while the pressure in the reaction chamber was 1.5 × 100 Pa.Figure 1

Bottom Line: Furthermore, a bending test upon single Al2O3 layers showed an increased WVTR of 1.59 × 10(-3) g/m(2)/day.However, the film with a 4 nm alucone organic layer inserted into the center displayed improved surface roughness, barrier performance, and transmittance.After the bending test, the hybrid film with 4 nm equally distributed alucone maintained better surface roughness (0.339 ± 0.014 nm) and barrier properties (9.94 × 10(-5) g/m(2)/day).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Jilin, 130012 China.

ABSTRACT
Atomic layer deposition (ALD) has been widely reported as a novel method for thin film encapsulation (TFE) of organic light-emitting diodes and organic photovoltaic cells. Both organic and inorganic thin films can be deposited by ALD with a variety of precursors. In this work, the performances of Al2O3 thin films and Al2O3/alucone hybrid films have been investigated. The samples with a 50 nm Al2O3 inorganic layer deposited by ALD at a low temperature of 80°C showed higher surface roughness (0.503 ± 0.011 nm), higher water vapor transmission rate (WVTR) values (3.77 × 10(-4) g/m(2)/day), and lower transmittance values (61%) when compared with the Al2O3 (inorganic)/alucone (organic) hybrid structure under same conditions. Furthermore, a bending test upon single Al2O3 layers showed an increased WVTR of 1.59 × 10(-3) g/m(2)/day. However, the film with a 4 nm alucone organic layer inserted into the center displayed improved surface roughness, barrier performance, and transmittance. After the bending test, the hybrid film with 4 nm equally distributed alucone maintained better surface roughness (0.339 ± 0.014 nm) and barrier properties (9.94 × 10(-5) g/m(2)/day). This interesting phenomenon reveals that multilayer thin films consisting of inorganic layers and decentralized alucone organic components have the potential to be useful in TFE applications on flexible optical electronics.

No MeSH data available.


Related in: MedlinePlus