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Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system.

Lien SY, Yang CH, Wu KC, Kung CY - Nanoscale Res Lett (2015)

Bottom Line: Thin stoichiometric silicon dioxide films prepared on the Si surface prior to Al2O3 fabrication effectively reduce a considerable amount of blisters.Eventually, the entire PERC with the improved triple-layer SiO2/Al2O3/SiNx:H stacked passivation film has an obvious gain in open-circuit voltage (V oc) and short-circuit current (J sc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively.The electrical performance of the optimized PERC with the V oc of 0.647 V, J sc of 38.2 mA/cm(2), fill factor of 0.776, and the efficiency of 19.18% can be achieved.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, DaYeh University, No. 168, Xuefu Road, Changhua, 515 Taiwan.

ABSTRACT
Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this study, an ultrafast, non-vacuum spatial ALD with the deposition rate of around 10 nm/min, developed by our group, is hired to deposit Al2O3 films. Upon post-annealing for the Al2O3 films, the unwanted delamination, regarded as blisters, was found by an optical microscope. This may lead to a worse contact within the Si/Al2O3 interface, deteriorating the passivation quality. Thin stoichiometric silicon dioxide films prepared on the Si surface prior to Al2O3 fabrication effectively reduce a considerable amount of blisters. The residual blisters can be further out-gassed when the Al2O3 films are thinned to 8 nm and annealed above 650°C. Eventually, the entire PERC with the improved triple-layer SiO2/Al2O3/SiNx:H stacked passivation film has an obvious gain in open-circuit voltage (V oc) and short-circuit current (J sc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively. The electrical performance of the optimized PERC with the V oc of 0.647 V, J sc of 38.2 mA/cm(2), fill factor of 0.776, and the efficiency of 19.18% can be achieved.

No MeSH data available.


Related in: MedlinePlus

High-resolution transmission electron microscope (HR-TEM) cross-sectional image of the stacked Si/3 nm-SiO2/8 nm-Al2O3/70 nm-SiNx:H film.
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Fig7: High-resolution transmission electron microscope (HR-TEM) cross-sectional image of the stacked Si/3 nm-SiO2/8 nm-Al2O3/70 nm-SiNx:H film.

Mentions: Figure 7 displays the high-resolution transmission electron microscope (HR-TEM) cross-sectional image of the stacked Si/3 nm-SiO2/8 nm-Al2O3/70 nm-SiNx:H film, in which we can see the three interfaces such as Si/SiO2, SiO2/Al2O3, and Al2O3/SiNx:H are all flattened without any vacancy or void to deteriorate the passivation effect. The very thin SiO2 film with only 3 nm is deposited using the ICPCVD. The accurate control in thickness is based on the deposition rate determined by the past experiments. In the meanwhile, this TEM image confirms that the Al2O3 film deposited by self-developed non-vacuum spatial ALD is quite uniform.Figure 7


Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system.

Lien SY, Yang CH, Wu KC, Kung CY - Nanoscale Res Lett (2015)

High-resolution transmission electron microscope (HR-TEM) cross-sectional image of the stacked Si/3 nm-SiO2/8 nm-Al2O3/70 nm-SiNx:H film.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385260&req=5

Fig7: High-resolution transmission electron microscope (HR-TEM) cross-sectional image of the stacked Si/3 nm-SiO2/8 nm-Al2O3/70 nm-SiNx:H film.
Mentions: Figure 7 displays the high-resolution transmission electron microscope (HR-TEM) cross-sectional image of the stacked Si/3 nm-SiO2/8 nm-Al2O3/70 nm-SiNx:H film, in which we can see the three interfaces such as Si/SiO2, SiO2/Al2O3, and Al2O3/SiNx:H are all flattened without any vacancy or void to deteriorate the passivation effect. The very thin SiO2 film with only 3 nm is deposited using the ICPCVD. The accurate control in thickness is based on the deposition rate determined by the past experiments. In the meanwhile, this TEM image confirms that the Al2O3 film deposited by self-developed non-vacuum spatial ALD is quite uniform.Figure 7

Bottom Line: Thin stoichiometric silicon dioxide films prepared on the Si surface prior to Al2O3 fabrication effectively reduce a considerable amount of blisters.Eventually, the entire PERC with the improved triple-layer SiO2/Al2O3/SiNx:H stacked passivation film has an obvious gain in open-circuit voltage (V oc) and short-circuit current (J sc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively.The electrical performance of the optimized PERC with the V oc of 0.647 V, J sc of 38.2 mA/cm(2), fill factor of 0.776, and the efficiency of 19.18% can be achieved.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, DaYeh University, No. 168, Xuefu Road, Changhua, 515 Taiwan.

ABSTRACT
Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this study, an ultrafast, non-vacuum spatial ALD with the deposition rate of around 10 nm/min, developed by our group, is hired to deposit Al2O3 films. Upon post-annealing for the Al2O3 films, the unwanted delamination, regarded as blisters, was found by an optical microscope. This may lead to a worse contact within the Si/Al2O3 interface, deteriorating the passivation quality. Thin stoichiometric silicon dioxide films prepared on the Si surface prior to Al2O3 fabrication effectively reduce a considerable amount of blisters. The residual blisters can be further out-gassed when the Al2O3 films are thinned to 8 nm and annealed above 650°C. Eventually, the entire PERC with the improved triple-layer SiO2/Al2O3/SiNx:H stacked passivation film has an obvious gain in open-circuit voltage (V oc) and short-circuit current (J sc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively. The electrical performance of the optimized PERC with the V oc of 0.647 V, J sc of 38.2 mA/cm(2), fill factor of 0.776, and the efficiency of 19.18% can be achieved.

No MeSH data available.


Related in: MedlinePlus