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Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell.

Li S, Bi J, Li M, Yang M, Song M, Liu G, Xiong W, Li Y, Fang Y, Chen C, Lin G, Chen W, Wu C, Wang D - Nanoscale Res Lett (2015)

Bottom Line: A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer.The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley-Read-Hall recombination centers.Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.

View Article: PubMed Central - PubMed

Affiliation: Xiamen San'an Optoelectronics Co., Ltd, Xiamen, 361009 China ; Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China ; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 China.

ABSTRACT
The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley-Read-Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.

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HRXRD of InAs/GaAs QD structure. (a) Sample A1 with Ga0.90In0.10As SRL, (b) sample A2 without Ga0.90In0.10As SRL.
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Fig2: HRXRD of InAs/GaAs QD structure. (a) Sample A1 with Ga0.90In0.10As SRL, (b) sample A2 without Ga0.90In0.10As SRL.

Mentions: As illustrated in Figure 2, the Ga(In)As and Ge are lattice matched which were confirmed by the single Bragg peak. In both HRXRD spectra, the five period InAs/GaAs QD superlattice (SL) fringe peaks are visible. The zeroth-order peak of sample A1 is buried underneath the Ga(In)As and Ge Bragg peak, but a shift of 140 arc-second is observed in sample A2, meaning that the five period InAs/GaAs QD SL is under a tensile strain from the substrate. The out-of-plane strain ε⊥ is 1.045‰, which is determined from a differentiated formulation of Bragg’s law shown as followed [17]:Figure 2


Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell.

Li S, Bi J, Li M, Yang M, Song M, Liu G, Xiong W, Li Y, Fang Y, Chen C, Lin G, Chen W, Wu C, Wang D - Nanoscale Res Lett (2015)

HRXRD of InAs/GaAs QD structure. (a) Sample A1 with Ga0.90In0.10As SRL, (b) sample A2 without Ga0.90In0.10As SRL.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385240&req=5

Fig2: HRXRD of InAs/GaAs QD structure. (a) Sample A1 with Ga0.90In0.10As SRL, (b) sample A2 without Ga0.90In0.10As SRL.
Mentions: As illustrated in Figure 2, the Ga(In)As and Ge are lattice matched which were confirmed by the single Bragg peak. In both HRXRD spectra, the five period InAs/GaAs QD superlattice (SL) fringe peaks are visible. The zeroth-order peak of sample A1 is buried underneath the Ga(In)As and Ge Bragg peak, but a shift of 140 arc-second is observed in sample A2, meaning that the five period InAs/GaAs QD SL is under a tensile strain from the substrate. The out-of-plane strain ε⊥ is 1.045‰, which is determined from a differentiated formulation of Bragg’s law shown as followed [17]:Figure 2

Bottom Line: A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer.The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley-Read-Hall recombination centers.Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.

View Article: PubMed Central - PubMed

Affiliation: Xiamen San'an Optoelectronics Co., Ltd, Xiamen, 361009 China ; Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China ; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 China.

ABSTRACT
The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley-Read-Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.

No MeSH data available.


Related in: MedlinePlus