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A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

Cho AJ, Park KC, Kwon JY - Nanoscale Res Lett (2015)

Bottom Line: For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material.Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility.Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor.

View Article: PubMed Central - PubMed

Affiliation: School of Integrated Technology, Yonsei University, 85 Songdoguahak-ro, Incheon, 406-840 Korea ; Yonsei Institute of Convergence Technology, 85 Songdoguahak-ro, Incheon, 406-840 Korea.

ABSTRACT
For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured.

No MeSH data available.


Related in: MedlinePlus

Voltage transfer characteristics of the inverter. Voltage transfer characteristics and gain curve of a MoS2/WSe2 complementary inverter at a VDD of 2V.
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Fig3: Voltage transfer characteristics of the inverter. Voltage transfer characteristics and gain curve of a MoS2/WSe2 complementary inverter at a VDD of 2V.

Mentions: After sorting MoS2 n-FET and WSe2 p-FET presenting reasonable electrical performances, CMOS inverter was fabricated with them. The two FETs were connected in series, n-FET drain-by-p-FET drain, with a metal line in order to have them work together as a logic inverter. As shown in Figure 1, the electrical connection was configured to measure the performance of the completed complementary TMD inverter. Four probes were used to apply the voltage and to record the output voltage. A constant bias of VDD = 2 V was applied, and the relation between the input voltage and the output voltage was measured as shown in Figure 3. The voltage transfer characteristic in Figure 3 was measured from the TMD CMOS inverter consists of n-FET and p-FET indicated at Figure 2c,d, respectively. While the device received a low-input voltage, the p-type WSe2 FET was left in the ‘on’ state and the n-type MoS2 FET was in the ‘off’ state. Hence, the output voltage remained high, near VDD. On the other hand, the n-type MoS2 FET was in the on state, and the p-type WSe2 FET was in the off state when a high input was applied. As a result, an output voltage of 0 V was measured, which indicates that logic operation from 1 to 0 was performed. Such a voltage transfer curve clearly demonstrates the characteristics of an inverter.Figure 3


A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

Cho AJ, Park KC, Kwon JY - Nanoscale Res Lett (2015)

Voltage transfer characteristics of the inverter. Voltage transfer characteristics and gain curve of a MoS2/WSe2 complementary inverter at a VDD of 2V.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385225&req=5

Fig3: Voltage transfer characteristics of the inverter. Voltage transfer characteristics and gain curve of a MoS2/WSe2 complementary inverter at a VDD of 2V.
Mentions: After sorting MoS2 n-FET and WSe2 p-FET presenting reasonable electrical performances, CMOS inverter was fabricated with them. The two FETs were connected in series, n-FET drain-by-p-FET drain, with a metal line in order to have them work together as a logic inverter. As shown in Figure 1, the electrical connection was configured to measure the performance of the completed complementary TMD inverter. Four probes were used to apply the voltage and to record the output voltage. A constant bias of VDD = 2 V was applied, and the relation between the input voltage and the output voltage was measured as shown in Figure 3. The voltage transfer characteristic in Figure 3 was measured from the TMD CMOS inverter consists of n-FET and p-FET indicated at Figure 2c,d, respectively. While the device received a low-input voltage, the p-type WSe2 FET was left in the ‘on’ state and the n-type MoS2 FET was in the ‘off’ state. Hence, the output voltage remained high, near VDD. On the other hand, the n-type MoS2 FET was in the on state, and the p-type WSe2 FET was in the off state when a high input was applied. As a result, an output voltage of 0 V was measured, which indicates that logic operation from 1 to 0 was performed. Such a voltage transfer curve clearly demonstrates the characteristics of an inverter.Figure 3

Bottom Line: For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material.Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility.Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor.

View Article: PubMed Central - PubMed

Affiliation: School of Integrated Technology, Yonsei University, 85 Songdoguahak-ro, Incheon, 406-840 Korea ; Yonsei Institute of Convergence Technology, 85 Songdoguahak-ro, Incheon, 406-840 Korea.

ABSTRACT
For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured.

No MeSH data available.


Related in: MedlinePlus