Limits...
A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

Cho AJ, Park KC, Kwon JY - Nanoscale Res Lett (2015)

Bottom Line: For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material.Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility.Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor.

View Article: PubMed Central - PubMed

Affiliation: School of Integrated Technology, Yonsei University, 85 Songdoguahak-ro, Incheon, 406-840 Korea ; Yonsei Institute of Convergence Technology, 85 Songdoguahak-ro, Incheon, 406-840 Korea.

ABSTRACT
For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured.

No MeSH data available.


Related in: MedlinePlus

Device structure with electrical connections. Schematic illustration and optical microscopy image of a MoS2/WSe2 complementary inverter with electrical connections that were used to measure the electrical characteristics.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4385225&req=5

Fig1: Device structure with electrical connections. Schematic illustration and optical microscopy image of a MoS2/WSe2 complementary inverter with electrical connections that were used to measure the electrical characteristics.

Mentions: Figure 1 depicts the overall structure of the TMD CMOS inverter that contains both an n-FET and a p-FET with TMDs as channel materials. We used multi-layer MoS2 for the n-type channel and multi-layer WSe2 for the p-type semiconducting material (Figure 2a,b). Ti was chosen as the metal electrode for the MoS2 FET since that metal is known to have a small work function, and it is therefore easier to form an ohmic contact with MoS2 [4]. On the other hand, WSe2 has unique characteristic in that a simultaneous injection of both holes and electrons can easily occur, resulting in ambipolar transport [5,7]. In order to meet our goals for fabricating the p-type FET, a metal with a large work function had better be used for the electrode. Therefore, we chose Pt for the WSe2 FET since Pt has a work function of 5.12 to 5.93 eV.Figure 1


A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

Cho AJ, Park KC, Kwon JY - Nanoscale Res Lett (2015)

Device structure with electrical connections. Schematic illustration and optical microscopy image of a MoS2/WSe2 complementary inverter with electrical connections that were used to measure the electrical characteristics.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385225&req=5

Fig1: Device structure with electrical connections. Schematic illustration and optical microscopy image of a MoS2/WSe2 complementary inverter with electrical connections that were used to measure the electrical characteristics.
Mentions: Figure 1 depicts the overall structure of the TMD CMOS inverter that contains both an n-FET and a p-FET with TMDs as channel materials. We used multi-layer MoS2 for the n-type channel and multi-layer WSe2 for the p-type semiconducting material (Figure 2a,b). Ti was chosen as the metal electrode for the MoS2 FET since that metal is known to have a small work function, and it is therefore easier to form an ohmic contact with MoS2 [4]. On the other hand, WSe2 has unique characteristic in that a simultaneous injection of both holes and electrons can easily occur, resulting in ambipolar transport [5,7]. In order to meet our goals for fabricating the p-type FET, a metal with a large work function had better be used for the electrode. Therefore, we chose Pt for the WSe2 FET since Pt has a work function of 5.12 to 5.93 eV.Figure 1

Bottom Line: For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material.Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility.Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor.

View Article: PubMed Central - PubMed

Affiliation: School of Integrated Technology, Yonsei University, 85 Songdoguahak-ro, Incheon, 406-840 Korea ; Yonsei Institute of Convergence Technology, 85 Songdoguahak-ro, Incheon, 406-840 Korea.

ABSTRACT
For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured.

No MeSH data available.


Related in: MedlinePlus