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AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

Liu XY, Zhao SX, Zhang LQ, Huang HF, Shi JS, Zhang CM, Lu HL, Wang PF, Zhang DW - Nanoscale Res Lett (2015)

Bottom Line: Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs).In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented.The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 220 Han Dan Road, Shanghai, 200433 China.

ABSTRACT
Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

No MeSH data available.


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C-Vcharacteristics of Ni-Au/AlGaN-GaN Schottky diode and Ni-Au/AlN/AlGaN-GaN MIS diode.
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Fig4: C-Vcharacteristics of Ni-Au/AlGaN-GaN Schottky diode and Ni-Au/AlN/AlGaN-GaN MIS diode.

Mentions: Agilent 4294 precision impedance analyzer was used to measure the frequency-dependence capacitance-voltage characteristics of the MIS diodes and the Schottky diodes. In Figure 4, the C-V characteristics of the Ni-Au/AlGaN-GaN Schottky diode and the Ni-Au/AlN/AlGaN-GaN MIS diode are compared. A frequency dispersion of about 2.2% in the 2DEG accumulation region can be observed. The threshold voltage dispersion is negligible when the frequency is varied from 1 to 100 kHz. The capacitance of the Schottky and MIS diodes is 272 and 214 nF/cm2, respectively, in the accumulation region.Figure 4


AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

Liu XY, Zhao SX, Zhang LQ, Huang HF, Shi JS, Zhang CM, Lu HL, Wang PF, Zhang DW - Nanoscale Res Lett (2015)

C-Vcharacteristics of Ni-Au/AlGaN-GaN Schottky diode and Ni-Au/AlN/AlGaN-GaN MIS diode.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385223&req=5

Fig4: C-Vcharacteristics of Ni-Au/AlGaN-GaN Schottky diode and Ni-Au/AlN/AlGaN-GaN MIS diode.
Mentions: Agilent 4294 precision impedance analyzer was used to measure the frequency-dependence capacitance-voltage characteristics of the MIS diodes and the Schottky diodes. In Figure 4, the C-V characteristics of the Ni-Au/AlGaN-GaN Schottky diode and the Ni-Au/AlN/AlGaN-GaN MIS diode are compared. A frequency dispersion of about 2.2% in the 2DEG accumulation region can be observed. The threshold voltage dispersion is negligible when the frequency is varied from 1 to 100 kHz. The capacitance of the Schottky and MIS diodes is 272 and 214 nF/cm2, respectively, in the accumulation region.Figure 4

Bottom Line: Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs).In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented.The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 220 Han Dan Road, Shanghai, 200433 China.

ABSTRACT
Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

No MeSH data available.


Related in: MedlinePlus