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Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

Wei Y, Pan F, Zhang Q, Ma P - Nanoscale Res Lett (2015)

Bottom Line: Reasons for film damaged were also investigated.The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films.In addition, it was shown that the LIDT could be improved by further altering the process parameters.

View Article: PubMed Central - PubMed

Affiliation: Chengdu Fine Optical Engineering Research Center, Chengdu, Sichuan 610041 P. R. China.

ABSTRACT
Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

No MeSH data available.


Related in: MedlinePlus

SEM images for HfO2/Al2O3anti-reflector damage morphology. (a) Damage spot. (b) Surface morphology of the anti-reflector. (c, d) Magnified image of the edge of the damage spot.
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Fig9: SEM images for HfO2/Al2O3anti-reflector damage morphology. (a) Damage spot. (b) Surface morphology of the anti-reflector. (c, d) Magnified image of the edge of the damage spot.

Mentions: The HfO2/Al2O3 anti-reflector damage morphology was shown in Figure 9a and the feature was also amplified in Figure 9c,d. In addition, Figure 9b shows the film surface morphology. As shown in Figure 9, the damage morphology of the HfO2/Al2O3 anti-reflector was similar to that of the single HfO2 layer. The dominant damage morphology was observed to be peeling. The former results showed that the LIDT of the HfO2 single layer and the HfO2/Al2O3 anti-reflector were small and the LIDT of the Al2O3 film was much higher. It can therefore be concluded that the HfO2 layer was the damage-inducing factor for the HfO2/Al2O3 anti-reflector. Therefore, improving LIDT of the HfO2 films could further improve the LIDT of the anti-reflector.Figure 9


Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

Wei Y, Pan F, Zhang Q, Ma P - Nanoscale Res Lett (2015)

SEM images for HfO2/Al2O3anti-reflector damage morphology. (a) Damage spot. (b) Surface morphology of the anti-reflector. (c, d) Magnified image of the edge of the damage spot.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385131&req=5

Fig9: SEM images for HfO2/Al2O3anti-reflector damage morphology. (a) Damage spot. (b) Surface morphology of the anti-reflector. (c, d) Magnified image of the edge of the damage spot.
Mentions: The HfO2/Al2O3 anti-reflector damage morphology was shown in Figure 9a and the feature was also amplified in Figure 9c,d. In addition, Figure 9b shows the film surface morphology. As shown in Figure 9, the damage morphology of the HfO2/Al2O3 anti-reflector was similar to that of the single HfO2 layer. The dominant damage morphology was observed to be peeling. The former results showed that the LIDT of the HfO2 single layer and the HfO2/Al2O3 anti-reflector were small and the LIDT of the Al2O3 film was much higher. It can therefore be concluded that the HfO2 layer was the damage-inducing factor for the HfO2/Al2O3 anti-reflector. Therefore, improving LIDT of the HfO2 films could further improve the LIDT of the anti-reflector.Figure 9

Bottom Line: Reasons for film damaged were also investigated.The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films.In addition, it was shown that the LIDT could be improved by further altering the process parameters.

View Article: PubMed Central - PubMed

Affiliation: Chengdu Fine Optical Engineering Research Center, Chengdu, Sichuan 610041 P. R. China.

ABSTRACT
Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

No MeSH data available.


Related in: MedlinePlus