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Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

Wei Y, Pan F, Zhang Q, Ma P - Nanoscale Res Lett (2015)

Bottom Line: Reasons for film damaged were also investigated.The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films.In addition, it was shown that the LIDT could be improved by further altering the process parameters.

View Article: PubMed Central - PubMed

Affiliation: Chengdu Fine Optical Engineering Research Center, Chengdu, Sichuan 610041 P. R. China.

ABSTRACT
Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

No MeSH data available.


Related in: MedlinePlus

Results of absorption measurements for thin films deposited with various precursors. TMA, trimethyl aluminum; TEMAH, tetrakis (ethylmethylamino) hafnium.
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Fig2: Results of absorption measurements for thin films deposited with various precursors. TMA, trimethyl aluminum; TEMAH, tetrakis (ethylmethylamino) hafnium.

Mentions: Figure 2 shows absorption values for the thin films deposited using a variety of precursors. Specific precursors used for each thin film were listed on top of each column in the Figure 2. Trimethyl aluminum and tetrakis (ethylmethylamino) hafnium were abbreviated as TMA and TEMAH, respectively. In addition, due to the low vapor pressure of precursors such as AlCl3 and HfCl4, hot sources were needed to aid the deposition process. Because the coating instrument had only a single hot source, the anti-reflector was deposited using pure organic precursors and in combination for the inorganic/organic precursors. The thickness of the Al2O3 and HfO2 single layers were both 100 nm. For the anti-reflector, the thickness of the Al2O3 and HfO2 films were 199 nm and 79 nm, respectively. As shown in Figure 2, single layers deposited with the inorganic precursor had smaller absorption values than those deposited using an organic precursor. The absorption value for the anti-reflector film was greater than the single layer due to the increased film thickness. In addition, the anti-reflector deposited using pure organic precursor had a larger absorption value than anti-reflector deposited in combination with the inorganic/organic precursors. These absorption results show that precursor type has a large affect on the absorption of the thin film. When the organic precursor was used, the adsorption force was larger than that for an inorganic precursor. This was evidenced by the fact that although the deposition process was carried out for the same duration of time, a greater number of organic groups remained in the film as compared to inorganic groups. Organic groups showed intense absorption for infrared laser wavelength. Overall, single-layer thin films deposited using the organic precursor had larger absorption values than those fabricated using an inorganic precursor.Figure 2


Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

Wei Y, Pan F, Zhang Q, Ma P - Nanoscale Res Lett (2015)

Results of absorption measurements for thin films deposited with various precursors. TMA, trimethyl aluminum; TEMAH, tetrakis (ethylmethylamino) hafnium.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385131&req=5

Fig2: Results of absorption measurements for thin films deposited with various precursors. TMA, trimethyl aluminum; TEMAH, tetrakis (ethylmethylamino) hafnium.
Mentions: Figure 2 shows absorption values for the thin films deposited using a variety of precursors. Specific precursors used for each thin film were listed on top of each column in the Figure 2. Trimethyl aluminum and tetrakis (ethylmethylamino) hafnium were abbreviated as TMA and TEMAH, respectively. In addition, due to the low vapor pressure of precursors such as AlCl3 and HfCl4, hot sources were needed to aid the deposition process. Because the coating instrument had only a single hot source, the anti-reflector was deposited using pure organic precursors and in combination for the inorganic/organic precursors. The thickness of the Al2O3 and HfO2 single layers were both 100 nm. For the anti-reflector, the thickness of the Al2O3 and HfO2 films were 199 nm and 79 nm, respectively. As shown in Figure 2, single layers deposited with the inorganic precursor had smaller absorption values than those deposited using an organic precursor. The absorption value for the anti-reflector film was greater than the single layer due to the increased film thickness. In addition, the anti-reflector deposited using pure organic precursor had a larger absorption value than anti-reflector deposited in combination with the inorganic/organic precursors. These absorption results show that precursor type has a large affect on the absorption of the thin film. When the organic precursor was used, the adsorption force was larger than that for an inorganic precursor. This was evidenced by the fact that although the deposition process was carried out for the same duration of time, a greater number of organic groups remained in the film as compared to inorganic groups. Organic groups showed intense absorption for infrared laser wavelength. Overall, single-layer thin films deposited using the organic precursor had larger absorption values than those fabricated using an inorganic precursor.Figure 2

Bottom Line: Reasons for film damaged were also investigated.The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films.In addition, it was shown that the LIDT could be improved by further altering the process parameters.

View Article: PubMed Central - PubMed

Affiliation: Chengdu Fine Optical Engineering Research Center, Chengdu, Sichuan 610041 P. R. China.

ABSTRACT
Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

No MeSH data available.


Related in: MedlinePlus