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Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone.

Jin C, Liu B, Lei Z, Sun J - Nanoscale Res Lett (2015)

Bottom Line: Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C.The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C.Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Weijin Road 94, Tianjin, 300071 China.

ABSTRACT
TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

No MeSH data available.


XRD patterns of the TiO2films annealed at different temperatures in N2atmosphere. The as-grown TiO2 film is amorphous deposited at a substrate temperature of 165°C.
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Fig5: XRD patterns of the TiO2films annealed at different temperatures in N2atmosphere. The as-grown TiO2 film is amorphous deposited at a substrate temperature of 165°C.

Mentions: The thermal stability of the structures in ALD TiO2 films was studied by annealing two as-grown samples with different initial structures in N2 atmosphere; one is an amorphous TiO2 film grown at low substrate temperature of 165°C, and the other is an anatase TiO2 film grown at 250°C. Figure 5 shows the XRD patterns from the TiO2 films after annealing the as-grown amorphous sample at different temperatures in N2 atmosphere for 1 h. Initially, the films are still amorphous at lower annealing temperature below 250°C, then they crystallize to anatase TiO2 in a very wide annealing temperature range from 300°C to 1,100°C, as shown in the emergence of the (101), (004), and (200) peaks of anatase TiO2 in the XRD patterns in Figure 5.Figure 5


Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone.

Jin C, Liu B, Lei Z, Sun J - Nanoscale Res Lett (2015)

XRD patterns of the TiO2films annealed at different temperatures in N2atmosphere. The as-grown TiO2 film is amorphous deposited at a substrate temperature of 165°C.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385123&req=5

Fig5: XRD patterns of the TiO2films annealed at different temperatures in N2atmosphere. The as-grown TiO2 film is amorphous deposited at a substrate temperature of 165°C.
Mentions: The thermal stability of the structures in ALD TiO2 films was studied by annealing two as-grown samples with different initial structures in N2 atmosphere; one is an amorphous TiO2 film grown at low substrate temperature of 165°C, and the other is an anatase TiO2 film grown at 250°C. Figure 5 shows the XRD patterns from the TiO2 films after annealing the as-grown amorphous sample at different temperatures in N2 atmosphere for 1 h. Initially, the films are still amorphous at lower annealing temperature below 250°C, then they crystallize to anatase TiO2 in a very wide annealing temperature range from 300°C to 1,100°C, as shown in the emergence of the (101), (004), and (200) peaks of anatase TiO2 in the XRD patterns in Figure 5.Figure 5

Bottom Line: Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C.The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C.Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Weijin Road 94, Tianjin, 300071 China.

ABSTRACT
TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

No MeSH data available.