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Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone.

Jin C, Liu B, Lei Z, Sun J - Nanoscale Res Lett (2015)

Bottom Line: The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C.Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm.A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Weijin Road 94, Tianjin, 300071 China.

ABSTRACT
TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

No MeSH data available.


Related in: MedlinePlus

Dependences of the growth per cycle and refractive index on the growth temperature. The TiO2 films were deposited on Si (100) substrates with 1,000 ALD cycles.
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Fig1: Dependences of the growth per cycle and refractive index on the growth temperature. The TiO2 films were deposited on Si (100) substrates with 1,000 ALD cycles.

Mentions: Figure 1 shows the dependences of the growth per cycle and the refractive index of the TiO2 films on the growth temperature. Initially, the growth rate of the TiO2 films decreases from 0.52 to 0.45 Å/cycle with increasing temperature from 75°C to 100°C, then a saturated growth window appears at the growth temperature from 100°C to 250°C, with a stable self-limiting growth rate of 0.46 Å/cycle. Further increasing the growth temperature above 300°C, the growth rate strongly increases. The growth rate in Figure 1 is consistent with the results in ref. [37] in the same temperature range, which showed an ALD temperature window of 150°C to 225°C and a deposition rate of 0.44 ± 0.15 Å/cycle, respectively.Figure 1


Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone.

Jin C, Liu B, Lei Z, Sun J - Nanoscale Res Lett (2015)

Dependences of the growth per cycle and refractive index on the growth temperature. The TiO2 films were deposited on Si (100) substrates with 1,000 ALD cycles.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385123&req=5

Fig1: Dependences of the growth per cycle and refractive index on the growth temperature. The TiO2 films were deposited on Si (100) substrates with 1,000 ALD cycles.
Mentions: Figure 1 shows the dependences of the growth per cycle and the refractive index of the TiO2 films on the growth temperature. Initially, the growth rate of the TiO2 films decreases from 0.52 to 0.45 Å/cycle with increasing temperature from 75°C to 100°C, then a saturated growth window appears at the growth temperature from 100°C to 250°C, with a stable self-limiting growth rate of 0.46 Å/cycle. Further increasing the growth temperature above 300°C, the growth rate strongly increases. The growth rate in Figure 1 is consistent with the results in ref. [37] in the same temperature range, which showed an ALD temperature window of 150°C to 225°C and a deposition rate of 0.44 ± 0.15 Å/cycle, respectively.Figure 1

Bottom Line: The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C.Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm.A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Weijin Road 94, Tianjin, 300071 China.

ABSTRACT
TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

No MeSH data available.


Related in: MedlinePlus