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The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111).

Wang W, Chen C, Zhang G, Wang T, Wu H, Liu Y, Liu C - Nanoscale Res Lett (2015)

Bottom Line: Meanwhile, the ZnO crystalline quality was significantly improved as verified by both XRD and PL analyses.The valence band offsets have been determined to be 3.06, 2.95, and 0.83 eV for ZnO/Si, ZnO/AlN, and AlN/Si heterojunctions, respectively, and the band alignment of ZnO/Si heterojunction was modified to be 0.72 eV after introducing the AlN buffer layer.Our work offered a potential way to fabricate Si-based ultraviolet light-emitting diodes and improve the device performances.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.

ABSTRACT
ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and I-V measurements were carried out to characterize structural, electrical, and optical properties. After introducing a 60-nm-thick AlN buffer layer, the growth direction of the ZnO films was changed from [10] to [0002]. Meanwhile, the ZnO crystalline quality was significantly improved as verified by both XRD and PL analyses. It has been demonstrated that the reverse leakage current was greatly reduced with the AlN buffer layer. The valence band offsets have been determined to be 3.06, 2.95, and 0.83 eV for ZnO/Si, ZnO/AlN, and AlN/Si heterojunctions, respectively, and the band alignment of ZnO/Si heterojunction was modified to be 0.72 eV after introducing the AlN buffer layer. Our work offered a potential way to fabricate Si-based ultraviolet light-emitting diodes and improve the device performances.

No MeSH data available.


Related in: MedlinePlus

Band alignment diagram of ZnO/Si and ZnO/AlN/Si bi-interface systems.
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Fig7: Band alignment diagram of ZnO/Si and ZnO/AlN/Si bi-interface systems.

Mentions: The band alignment of two bi-interface systems is illustrated in Figure 7 which includes all energy levels.Figure 7


The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111).

Wang W, Chen C, Zhang G, Wang T, Wu H, Liu Y, Liu C - Nanoscale Res Lett (2015)

Band alignment diagram of ZnO/Si and ZnO/AlN/Si bi-interface systems.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385121&req=5

Fig7: Band alignment diagram of ZnO/Si and ZnO/AlN/Si bi-interface systems.
Mentions: The band alignment of two bi-interface systems is illustrated in Figure 7 which includes all energy levels.Figure 7

Bottom Line: Meanwhile, the ZnO crystalline quality was significantly improved as verified by both XRD and PL analyses.The valence band offsets have been determined to be 3.06, 2.95, and 0.83 eV for ZnO/Si, ZnO/AlN, and AlN/Si heterojunctions, respectively, and the band alignment of ZnO/Si heterojunction was modified to be 0.72 eV after introducing the AlN buffer layer.Our work offered a potential way to fabricate Si-based ultraviolet light-emitting diodes and improve the device performances.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.

ABSTRACT
ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and I-V measurements were carried out to characterize structural, electrical, and optical properties. After introducing a 60-nm-thick AlN buffer layer, the growth direction of the ZnO films was changed from [10] to [0002]. Meanwhile, the ZnO crystalline quality was significantly improved as verified by both XRD and PL analyses. It has been demonstrated that the reverse leakage current was greatly reduced with the AlN buffer layer. The valence band offsets have been determined to be 3.06, 2.95, and 0.83 eV for ZnO/Si, ZnO/AlN, and AlN/Si heterojunctions, respectively, and the band alignment of ZnO/Si heterojunction was modified to be 0.72 eV after introducing the AlN buffer layer. Our work offered a potential way to fabricate Si-based ultraviolet light-emitting diodes and improve the device performances.

No MeSH data available.


Related in: MedlinePlus