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Single-crystalline chromium silicide nanowires and their physical properties.

Hsu HF, Tsai PC, Lu KC - Nanoscale Res Lett (2015)

Bottom Line: Processing parameters, including the temperature of Si (100) substrates and precursors, the gas flow rate, the heating time, and the different flow gas of reactions were varied and studied; additionally, the physical properties of the chromium disilicide nanowires were measured.It was found that single-crystal CrSi2 nanowires with a unique morphology were grown at 700°C, while single-crystal Cr5Si3 nanowires were grown at 750°C in reducing gas atmosphere.This study with magnetism, photoluminescence, and field emission measurements demonstrates that CrSi2 nanowires are attractive choices for future applications in magnetic storage, photovoltaic, and field emitters.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, National Cheng Kung University, No.1, University Rd, Tainan, 701 Taiwan.

ABSTRACT
In this work, chromium disilicide nanowires were synthesized by chemical vapor deposition (CVD) processes on Si (100) substrates with hydrous chromium chloride (CrCl3 · 6H2O) as precursors. Processing parameters, including the temperature of Si (100) substrates and precursors, the gas flow rate, the heating time, and the different flow gas of reactions were varied and studied; additionally, the physical properties of the chromium disilicide nanowires were measured. It was found that single-crystal CrSi2 nanowires with a unique morphology were grown at 700°C, while single-crystal Cr5Si3 nanowires were grown at 750°C in reducing gas atmosphere. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with magnetism, photoluminescence, and field emission measurements demonstrates that CrSi2 nanowires are attractive choices for future applications in magnetic storage, photovoltaic, and field emitters.

No MeSH data available.


SEM images of CrSi2nanowires at different gas flow rates of (a) 60, (b) 120, and (c) 240 sccm, respectively.
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Fig5: SEM images of CrSi2nanowires at different gas flow rates of (a) 60, (b) 120, and (c) 240 sccm, respectively.

Mentions: Also, we investigated the influence of the carrier gas flow rate when synthesizing chromium silicide nanowires. We conducted experiments at the gas flow rate of 60, 120, and 240 sccm at 700°C, obtaining the corresponding results shown in Figure 5a, b, c, respectively. It can be found that chromium disilicide nanowires appeared without particles at 60 sccm and with few particles at 120 sccm and that the morphology gradually transformed from nanowires to films at 240 sccm.Figure 5


Single-crystalline chromium silicide nanowires and their physical properties.

Hsu HF, Tsai PC, Lu KC - Nanoscale Res Lett (2015)

SEM images of CrSi2nanowires at different gas flow rates of (a) 60, (b) 120, and (c) 240 sccm, respectively.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385120&req=5

Fig5: SEM images of CrSi2nanowires at different gas flow rates of (a) 60, (b) 120, and (c) 240 sccm, respectively.
Mentions: Also, we investigated the influence of the carrier gas flow rate when synthesizing chromium silicide nanowires. We conducted experiments at the gas flow rate of 60, 120, and 240 sccm at 700°C, obtaining the corresponding results shown in Figure 5a, b, c, respectively. It can be found that chromium disilicide nanowires appeared without particles at 60 sccm and with few particles at 120 sccm and that the morphology gradually transformed from nanowires to films at 240 sccm.Figure 5

Bottom Line: Processing parameters, including the temperature of Si (100) substrates and precursors, the gas flow rate, the heating time, and the different flow gas of reactions were varied and studied; additionally, the physical properties of the chromium disilicide nanowires were measured.It was found that single-crystal CrSi2 nanowires with a unique morphology were grown at 700°C, while single-crystal Cr5Si3 nanowires were grown at 750°C in reducing gas atmosphere.This study with magnetism, photoluminescence, and field emission measurements demonstrates that CrSi2 nanowires are attractive choices for future applications in magnetic storage, photovoltaic, and field emitters.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, National Cheng Kung University, No.1, University Rd, Tainan, 701 Taiwan.

ABSTRACT
In this work, chromium disilicide nanowires were synthesized by chemical vapor deposition (CVD) processes on Si (100) substrates with hydrous chromium chloride (CrCl3 · 6H2O) as precursors. Processing parameters, including the temperature of Si (100) substrates and precursors, the gas flow rate, the heating time, and the different flow gas of reactions were varied and studied; additionally, the physical properties of the chromium disilicide nanowires were measured. It was found that single-crystal CrSi2 nanowires with a unique morphology were grown at 700°C, while single-crystal Cr5Si3 nanowires were grown at 750°C in reducing gas atmosphere. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with magnetism, photoluminescence, and field emission measurements demonstrates that CrSi2 nanowires are attractive choices for future applications in magnetic storage, photovoltaic, and field emitters.

No MeSH data available.