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The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist.

Dan'ko V, Indutnyi I, Myn'ko V, Lukaniuk M, Shepeliavyi P - Nanoscale Res Lett (2015)

Bottom Line: The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films.It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants.The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

View Article: PubMed Central - PubMed

Affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.

ABSTRACT
The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

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AFM image and profile of the 2-D Au structure on a glass plate.
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Fig6: AFM image and profile of the 2-D Au structure on a glass plate.

Mentions: This technology has been used for fabrication of one- and two-dimensional periodic structures with a spatial frequency up to 5,000 mm−1. As an example, Figures 5 and 6 present the AFM image of the Cr nanowires (period - 330 nm, width of the wire - about 120 nm, thickness - 40 nm) on the surface of silicon wafer and 2-D Au structure on a glass plate. Both samples are produced using interference lithography on annealed Ge25Se75 films and etching of the metal layers through a chalcogenide mask. The obtained high-frequency structures are used in optochemical sensors based on plasmonic systems.Figure 5


The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist.

Dan'ko V, Indutnyi I, Myn'ko V, Lukaniuk M, Shepeliavyi P - Nanoscale Res Lett (2015)

AFM image and profile of the 2-D Au structure on a glass plate.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385117&req=5

Fig6: AFM image and profile of the 2-D Au structure on a glass plate.
Mentions: This technology has been used for fabrication of one- and two-dimensional periodic structures with a spatial frequency up to 5,000 mm−1. As an example, Figures 5 and 6 present the AFM image of the Cr nanowires (period - 330 nm, width of the wire - about 120 nm, thickness - 40 nm) on the surface of silicon wafer and 2-D Au structure on a glass plate. Both samples are produced using interference lithography on annealed Ge25Se75 films and etching of the metal layers through a chalcogenide mask. The obtained high-frequency structures are used in optochemical sensors based on plasmonic systems.Figure 5

Bottom Line: The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films.It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants.The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

View Article: PubMed Central - PubMed

Affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.

ABSTRACT
The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

No MeSH data available.


Related in: MedlinePlus