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The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist.

Dan'ko V, Indutnyi I, Myn'ko V, Lukaniuk M, Shepeliavyi P - Nanoscale Res Lett (2015)

Bottom Line: The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films.It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants.The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

View Article: PubMed Central - PubMed

Affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.

ABSTRACT
The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

No MeSH data available.


Related in: MedlinePlus

Diffraction efficiency of interference structures. Spectral dependence of the diffraction efficiency η (in unpolarized light) for the gratings recorded on annealed Ge25Se75 films: curves 1, 2, 3, and 4 correspond to samples recorded after the first, second, third, and fourth exposure-annealing cycles, accordingly.
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Fig4: Diffraction efficiency of interference structures. Spectral dependence of the diffraction efficiency η (in unpolarized light) for the gratings recorded on annealed Ge25Se75 films: curves 1, 2, 3, and 4 correspond to samples recorded after the first, second, third, and fourth exposure-annealing cycles, accordingly.

Mentions: Figure 4 shows the diffraction efficiency of these interference structures recorded on annealed Ge25Se75 layers after exposure-annealing cycles that were repeated under the same conditions several times. As seen, the diffraction characteristics and surface morphology of the recorded diffraction structure do not change from cycle to cycle.Figure 4


The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist.

Dan'ko V, Indutnyi I, Myn'ko V, Lukaniuk M, Shepeliavyi P - Nanoscale Res Lett (2015)

Diffraction efficiency of interference structures. Spectral dependence of the diffraction efficiency η (in unpolarized light) for the gratings recorded on annealed Ge25Se75 films: curves 1, 2, 3, and 4 correspond to samples recorded after the first, second, third, and fourth exposure-annealing cycles, accordingly.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385117&req=5

Fig4: Diffraction efficiency of interference structures. Spectral dependence of the diffraction efficiency η (in unpolarized light) for the gratings recorded on annealed Ge25Se75 films: curves 1, 2, 3, and 4 correspond to samples recorded after the first, second, third, and fourth exposure-annealing cycles, accordingly.
Mentions: Figure 4 shows the diffraction efficiency of these interference structures recorded on annealed Ge25Se75 layers after exposure-annealing cycles that were repeated under the same conditions several times. As seen, the diffraction characteristics and surface morphology of the recorded diffraction structure do not change from cycle to cycle.Figure 4

Bottom Line: The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films.It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants.The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

View Article: PubMed Central - PubMed

Affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.

ABSTRACT
The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

No MeSH data available.


Related in: MedlinePlus