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The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist.

Dan'ko V, Indutnyi I, Myn'ko V, Lukaniuk M, Shepeliavyi P - Nanoscale Res Lett (2015)

Bottom Line: The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films.It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants.The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

View Article: PubMed Central - PubMed

Affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.

ABSTRACT
The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

No MeSH data available.


Related in: MedlinePlus

Dissolution kinetics of Ge25Se75layers in the amine-based etchant. Curve 1 - annealed and unexposed layer, curve 2 - annealed layer exposed before etching by integral radiation of the mercury lamp (250 W) for 45 min, and curve 3 - annealed layer exposed using the same lamp during etching.
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Fig1: Dissolution kinetics of Ge25Se75layers in the amine-based etchant. Curve 1 - annealed and unexposed layer, curve 2 - annealed layer exposed before etching by integral radiation of the mercury lamp (250 W) for 45 min, and curve 3 - annealed layer exposed using the same lamp during etching.

Mentions: Figure 1 shows the kinetic curves d(t) for the etching of Ge25Se75 layers in a selective amine-based etchant [13]. Ge25Se75 composition, which lies within the range of the intermediate phase glass compositions [14], was chosen as an object of our study. The initial thickness of these layers was d0 = 300 nm (d is the residual layer thickness after etching, and t is the duration of etching).Figure 1


The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist.

Dan'ko V, Indutnyi I, Myn'ko V, Lukaniuk M, Shepeliavyi P - Nanoscale Res Lett (2015)

Dissolution kinetics of Ge25Se75layers in the amine-based etchant. Curve 1 - annealed and unexposed layer, curve 2 - annealed layer exposed before etching by integral radiation of the mercury lamp (250 W) for 45 min, and curve 3 - annealed layer exposed using the same lamp during etching.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385117&req=5

Fig1: Dissolution kinetics of Ge25Se75layers in the amine-based etchant. Curve 1 - annealed and unexposed layer, curve 2 - annealed layer exposed before etching by integral radiation of the mercury lamp (250 W) for 45 min, and curve 3 - annealed layer exposed using the same lamp during etching.
Mentions: Figure 1 shows the kinetic curves d(t) for the etching of Ge25Se75 layers in a selective amine-based etchant [13]. Ge25Se75 composition, which lies within the range of the intermediate phase glass compositions [14], was chosen as an object of our study. The initial thickness of these layers was d0 = 300 nm (d is the residual layer thickness after etching, and t is the duration of etching).Figure 1

Bottom Line: The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films.It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants.The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

View Article: PubMed Central - PubMed

Affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.

ABSTRACT
The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

No MeSH data available.


Related in: MedlinePlus