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Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.

Shi S, Zhang Z, Lu Z, Shu H, Chen P, Li N, Zou J, Lu W - Nanoscale Res Lett (2015)

Bottom Line: The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported.Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase.The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.

View Article: PubMed Central - PubMed

Affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China.

ABSTRACT
In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.

No MeSH data available.


Related in: MedlinePlus

Structural and compositional details of the S1 segment. (a) A TEM image of the S1 segment from Figure 2c. (b) A high-resolution TEM image clearly showing the WZ structure of the NW segment from (a). (c) The typical EDS linescan result along the radial direction, which indicates that the S1 segment is composed of pure GaAs.
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Fig3: Structural and compositional details of the S1 segment. (a) A TEM image of the S1 segment from Figure 2c. (b) A high-resolution TEM image clearly showing the WZ structure of the NW segment from (a). (c) The typical EDS linescan result along the radial direction, which indicates that the S1 segment is composed of pure GaAs.

Mentions: Figure 3a shows a high-magnification bright-field TEM image taken from the S1 segment identified in Figure 2c, in which SFs can be occasionally noticed. Figure 3b shows a corresponding high-resolution TEM image, indicating that this section has the WZ crystal structure. Figure 3c shows a representative energy-dispersive X-ray spectroscopy (EDS) linescan of the NW segment shown in Figure 3a and confirms that the WZ segment is indeed pure GaAs. The result is in agreement with our previous study [31].Figure 3


Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.

Shi S, Zhang Z, Lu Z, Shu H, Chen P, Li N, Zou J, Lu W - Nanoscale Res Lett (2015)

Structural and compositional details of the S1 segment. (a) A TEM image of the S1 segment from Figure 2c. (b) A high-resolution TEM image clearly showing the WZ structure of the NW segment from (a). (c) The typical EDS linescan result along the radial direction, which indicates that the S1 segment is composed of pure GaAs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385115&req=5

Fig3: Structural and compositional details of the S1 segment. (a) A TEM image of the S1 segment from Figure 2c. (b) A high-resolution TEM image clearly showing the WZ structure of the NW segment from (a). (c) The typical EDS linescan result along the radial direction, which indicates that the S1 segment is composed of pure GaAs.
Mentions: Figure 3a shows a high-magnification bright-field TEM image taken from the S1 segment identified in Figure 2c, in which SFs can be occasionally noticed. Figure 3b shows a corresponding high-resolution TEM image, indicating that this section has the WZ crystal structure. Figure 3c shows a representative energy-dispersive X-ray spectroscopy (EDS) linescan of the NW segment shown in Figure 3a and confirms that the WZ segment is indeed pure GaAs. The result is in agreement with our previous study [31].Figure 3

Bottom Line: The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported.Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase.The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.

View Article: PubMed Central - PubMed

Affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China.

ABSTRACT
In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.

No MeSH data available.


Related in: MedlinePlus