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High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J - Nanoscale Res Lett (2015)

Bottom Line: Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays.In addition, multi-level data storage capability and robust reliability characteristics were also presented.The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

ABSTRACT
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

No MeSH data available.


Endurance and data retention. (a) DC endurance characteristics for 1,000 cycles. (b) Data retention for both HRS and LRS for 104 s at 85°C.
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Fig7: Endurance and data retention. (a) DC endurance characteristics for 1,000 cycles. (b) Data retention for both HRS and LRS for 104 s at 85°C.

Mentions: Figure 7a exhibits the SET/RESET endurance of 1,000 DC sweep cycles of the HfOx/AlOy-based RRAM devices. The set compliance current was 1 mA, and the reset stop voltage was −2 V. Both LRS and HRS were read at +0.1 V. Data of every cycle was extracted. Though the resistance is not very stable, the resistance ratio is always larger than 10.Figure 7


High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J - Nanoscale Res Lett (2015)

Endurance and data retention. (a) DC endurance characteristics for 1,000 cycles. (b) Data retention for both HRS and LRS for 104 s at 85°C.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385114&req=5

Fig7: Endurance and data retention. (a) DC endurance characteristics for 1,000 cycles. (b) Data retention for both HRS and LRS for 104 s at 85°C.
Mentions: Figure 7a exhibits the SET/RESET endurance of 1,000 DC sweep cycles of the HfOx/AlOy-based RRAM devices. The set compliance current was 1 mA, and the reset stop voltage was −2 V. Both LRS and HRS were read at +0.1 V. Data of every cycle was extracted. Though the resistance is not very stable, the resistance ratio is always larger than 10.Figure 7

Bottom Line: Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays.In addition, multi-level data storage capability and robust reliability characteristics were also presented.The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

ABSTRACT
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

No MeSH data available.