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High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J - Nanoscale Res Lett (2015)

Bottom Line: Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays.In addition, multi-level data storage capability and robust reliability characteristics were also presented.The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

ABSTRACT
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

No MeSH data available.


Multi-level RRAM cell. Multi-level resistance states achieved in the HfOx/AlOy-based RRAM (a) for the SET process by modulating current compliance, and (b) for the RESET process by modulating stop voltage.
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Fig5: Multi-level RRAM cell. Multi-level resistance states achieved in the HfOx/AlOy-based RRAM (a) for the SET process by modulating current compliance, and (b) for the RESET process by modulating stop voltage.

Mentions: A multi-level cell in RRAM is a desirable capability for high-density memory and neuromorphic computing system applications. The multi-level resistive switching behavior of the HfOx/AlOy-based devices can be achieved by adjusting both current compliance during the SET operation and stop voltage during the RESET process, as shown in FigureĀ 5. The LRS resistance can be modulated by SET current compliance possibly due to the modulation of the diameter or number of conductive filament (CF), while the HRS resistance can be controlled by RESET stop voltage possibly due to the modulation of the ruptured CF length [24].Figure 5


High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J - Nanoscale Res Lett (2015)

Multi-level RRAM cell. Multi-level resistance states achieved in the HfOx/AlOy-based RRAM (a) for the SET process by modulating current compliance, and (b) for the RESET process by modulating stop voltage.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385114&req=5

Fig5: Multi-level RRAM cell. Multi-level resistance states achieved in the HfOx/AlOy-based RRAM (a) for the SET process by modulating current compliance, and (b) for the RESET process by modulating stop voltage.
Mentions: A multi-level cell in RRAM is a desirable capability for high-density memory and neuromorphic computing system applications. The multi-level resistive switching behavior of the HfOx/AlOy-based devices can be achieved by adjusting both current compliance during the SET operation and stop voltage during the RESET process, as shown in FigureĀ 5. The LRS resistance can be modulated by SET current compliance possibly due to the modulation of the diameter or number of conductive filament (CF), while the HRS resistance can be controlled by RESET stop voltage possibly due to the modulation of the ruptured CF length [24].Figure 5

Bottom Line: Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays.In addition, multi-level data storage capability and robust reliability characteristics were also presented.The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

ABSTRACT
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

No MeSH data available.